Method for improved fabrication of salicide structures
AssigneeInternational Business Machines Corporation
InventorsKenneth J. Giewont, Yun Yu Wang, Russell Arndt, Craig Ransom, Judith Coffin, Anthony Domenicucci, Michael MacDonald, Brian E. Johnson
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Abstract
A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.
Claims26
A method for preparing a semiconductor material for the formation of a silicide layer on selected areas thereupon, the selected areas including at least one doped gate structure and at least one doped diffusion region, the selected areas further including at least one of a nitride film and an oxynitride film, the method comprising:
- removing said at least one of a nitride film and an oxynitride film from the selected areas.
A method of forming a salicide structure upon selected areas of a semiconductor substrate, the selected areas including at least one doped gate structure and at least one doped diffusion region, the selected areas further including at least one of a nitride film and an oxynitride film, the method comprising:
- pre-cleaning the selected areas of the semiconductor substrate by removing said at least one of a nitride film and an oxynitride film from the selected areas;
- depositing a refractory or near noble metal upon the substrate, including the selected areas;
- annealing said refractory or near noble metal, thereby causing said refractory or near noble metal to react with the selected areas and form a silicide layer;
- and
- removing unreacted portions of said refractory or near noble metal from the semiconductor substrate.
Dependencies are inferred from the claim text.