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US 6,475,892 B1Granted
Simplified method of patterning polysilicon gate in a semiconductor device
AssigneeAAdvanced Micro Devices, Inc.
InventorJayendra D. Bhakta
Life of this patent
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Abstract
Polysilicon gates are formed with greater accuracy and consistency by depositing a silicon carbide antireflective layer on the polysilicon layer before patterning. Embodiments also include depositing the polysilicon layer and the silicon carbide layer in the same tool.
Claims14
A method of manufacturing a semiconductor device, which method comprises:
- forming an oxide layer on a semiconductor substrate;
- forming a polysilicon layer on the oxide layer in a chamber;
- forming a silicon carbide coating on the polysilicon layer in the chamber;
- forming a photoresist mask on the silicon carbide coating, and
- etching to form a polysilicon gate electrode on a gate oxide layer.
2 more elements
A method of manufacturing a semiconductor device, which method comprises:
- forming an oxide layer on a semiconductor substrate;
- forming a polysilicon layer on the oxide layer in a chamber;
- forming a silicon carbide anti-reflective coating on the polysilicon layer in the chamber;
- and
- forming a photoresist mask on the silicon carbide anti-reflective coating.
2 more elements
Dependencies are inferred from the claim text.