Method of manufacturing semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYouji Kawasaki, Taketo Takahashi, Takashi Murakami
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Abstract
A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth equal to or greater than a junction depth of source/drain regions is formed along the entire junction region of the source/drain regions. The diffusion preventing layer is formed near the surface at the side of a gate insulation layer of the gate electrode including impurity.
Claims6
A method of manufacturing a semiconductor device, comprising sequentially:
- forming a gate electrode in a predetermined region on a main surface of a semiconductor region of a first conductivity type with a gate insulation layer posed therebetween;
- forming an implantation layer by ion-implanting molecular ions of nitrogen into said semiconductor region with a first implantation energy using said gate electrode as a mask;
- forming a pair of impurity regions of a second conductivity type, after forming the implantation layer, by ion implanting an impurity of a second conductivity type into said semiconductor region with a second implantation energy which is smaller than the first implantation energy using said gate electrode as a mask;
- and
- carrying out heat treatment.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode in a predetermined region on a main surface of a semiconductor region of a first conductivity type with a gate insulation layer posed therebetween;
- forming an impurity region having a predetermined depth from the upper surface of said gate electrode in said gate electrode by introducing an impurity into said gate electrode;
- forming an implantation layer having a depth equal to or greater than that of said impurity region by ion-implanting molecular ions of nitrogen into said gate electrode;
- and
- carrying out heat treatment thereafter.
A method of manufacturing a semiconductor device, comprising:
- forming a gate electrode in a predetermined region on a main surface of a semiconductor region of a first conductivity type with a gate insulation layer posed therebetween;
- forming an impurity region having a predetermined depth from the upper surface of said gate electrode in said gate electrode by introducing an impurity into said gate electrode;
- forming an implantation layer, after forming the impurity region, having a depth equal to or greater than that of said impurity region by ion-implanting molecular ions of nitrogen into said gate electrode;
- and
- carrying out heat treatment-thereafter.
Dependencies are inferred from the claim text.