Source/drain formation with sub-amorphizing implantation
AssigneeAdvanced Micro Devices, Inc.
InventorAkif Sultan
Life of this patent
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Abstract
Various methods of fabricating a source/drain structure are provided. In one aspect, a method of processing a semiconductor workpiece is provided that includes implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials and forming a source/drain region in the substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials. The plurality of interstitials retards diffusion of the impurities. Impurity diffusion is retarded, resulting in better activation and a more abrupt impurity profile.
Claims22
A method of processing a semiconductor workpiece, comprising:
- implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials;
- and
- forming a source/drain region in the substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials, the plurality of interstitials retarding diffusion of the impurities.
A method of processing, comprising:
- implanting a neutral ion species into a silicon-on-insulator substrate at a sub-amorphizing dosage to provide a plurality of interstitials;
- and
- forming a source/drain region in the silicon-on-insulator substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials, the plurality of interstitials retarding diffusion of the impurities.
A method of forming a source/drain extension region in a semiconductor substrate, comprising:
- implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials;
- and
- implanting impurities of a first conductivity type proximate the plurality of interstitials;
- and
- annealing the substrate to activate the implanted impurities, the plurality of interstitials retarding diffusion of the implanted impurities.
Dependencies are inferred from the claim text.