Method for forming a barrier layer

A method of forming a barrier layer comprising:

• providing a substrate including at least one semiconductor layer;
• fabricating a first semiconductor device proximate to the substrate;
• depositing a silicon-containing material over at least a portion of the first semiconductor device;
• processing the silicon-containing material with a reactive agent selected to react with silicon atoms of the silicon-containing material to form the barrier layer;
• and
• fabricating a second semiconductor device over the barrier layer.

A method of forming a barrier layer comprising:

• providing a silicon substrate including at least one semiconductor layer;
• vapor depositing a silicon-containing material from a silazane source over at least a portion of the silicon substrate;
• and
• processing the silicon-containing material in a reactive ambient selected to react with silicon atoms of the silicon-containing material at a processing temperature, a processing time and a processing pressure.

A method of forming a barrier layer in a semiconductor device including a transistor structure, said transistor structure including a source, a drain and a gate oxide layer formed over an active area between said source and drain, said method comprising:

• depositing a silicon-containing material over at least a portion of the transistor structure;
• processing the silicon-containing material in a reactive ambient to form the barrier layer;
• and
• forming a gate electrode over the barrier layer.

A method of forming a capacitor device with a barrier layer, the method comprising:

• forming an electrode over a substrate;
• depositing a silicon-containing material over the electrode;
• processing the silicon-containing material using rapid thermal nitridation with a nitridizing reactant to form the barrier layer;
• and
• forming a dielectric layer over the barrier layer.

A method of forming a barrier layer containing no metal on a semiconductor device comprising:

• providing a substrate including at least one semiconductor layer;
• fabricating the semiconductor device proximate to the substrate;
• depositing a silicon-containing material from a silicon source over at least a portion of the semiconductor device;
• and
• processing the silicon-containing material with a reactive agent selected to react with silicon atoms of the silicon-containing material to form the barrier layer containing no metal.

A method of forming a barrier layer containing no metal comprising:

• providing a silicon substrate including at least one semiconductor layer;
• vapor depositing a silicon-containing material from a silazane source over at least a portion of the silicon substrate;
• and
• forming the barrier layer by processing the silicon-containing material in a reactive ambient selected to react with silicon atoms of the silicon-containing material at a processing temperature, a processing time and a processing pressure.

A method of forming a barrier layer containing no metal in a semiconductor device including a transistor structure, said transistor structure including a source, a drain and a gate oxide layer formed over an active area between said source and drain, said method comprising:

• depositing a silicon-containing material over at least a portion of the transistor structure;
• processing the silicon-containing material in a reactive ambient to form the barrier layer containing no metal;
• and
• forming a gate electrode over the barrier layer.

A method of forming a capacitor device with a barrier layer containing no metal, the method comprising:

• forming an electrode over a substrate;
• depositing a silicon-containing material over the electrode;
• processing the silicon-containing material using rapid thermal nitridation with a nitridizing reactant to form the barrier layer containing no metal;
• and
• forming a dielectric layer over the barrier layer.