Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device

A method for producing a GaN-based compound semiconductor, comprising the steps of:

• (a) forming a crystal nucleus generation-inhibiting layer discretely on a substrate;
• (b) forming a buffer body having multiple pores on the substrate;
• (c) forming a buffer layer on the buffer body;
• and
• (d) forming a GaN-based compound semiconductor on the buffer layer.

A method for producing a GaN-based compound sermiconductor, comprising:

• (a) forming a crystal nucleus generation-inhibiting layer discretely on a substrate;
• (b) feeding SiH4 and NH3 to the substrate, wherein the amounts of SiH4 and NH3 to be fed are chosen such that an Si compound is formed in the form of islands on the substrate;
• (c) forming a buffer layer on the substrate;
• and
• (d) forming a GaN-based compound semiconductor on the buffer layer.

A method for producing a GaN-based compound semiconductor, comprising the steps of:

• (a) forming a GaN-based compound semiconductor on a substrate;
• (b) discontinuing formation of the GaN-based compound semiconductor to form a SiN buffer body discretely;
• and
• (c) forming another GaN-based compound semiconductor on the SiN buffer body, wherein the SiN buffer body is formed when a temperature of the substrate is 400° C. to 1200° C.