Polysilicon thin film transistor and method of manufacturing the same
AssigneeLG. Philips LCD Co., Ltd.
InventorYun Ho Jung
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Abstract
The present invention discloses a method of manufacturing a thin film transistor for use in a liquid crystal display device in which includes crystallizing an amorphous silicon layer formed over a substrate using a first SLS (sequential lateral solidification) laser annealing technique to form a polysilicon layer; forming sequentially a gate insulating layer and a gate electrode on the polysilicon layer; ion-doping the polysilicon layer using the gate electrode as a mask to form source and drain regions; and activating the gate electrode and the source and drain regions using a second SLS laser annealing technique. The gate electrode comprises an amorphous silicon.
Claims20
A method of manufacturing a thin film transistor, comprising the steps of:
- crystallizing an amorphous silicon layer formed over a substrate using a first SLS (sequential lateral solidification) laser annealing technique to form a polysilicon layer;
- forming sequentially a gate insulating layer and a gate electrode on the polysilicon layer;
- ion-doping the polysilicon layer to form source and drain regions;
- and
- activating the gate electrode and the source and drain regions using a second SLS laser annealing technique.
A method of manufacturing a thin film transistor, comprising the steps of:
- providing a polysilicon layer on a substrate;
- forming a gate electrode made of amorphous silicon on the polysilicon layer;
- ion-doping the polysilicon layer and the gate electrode to define source and drain regions;
- and
- activating the gate electrode and the source and drain regions using an SLS (sequential lateral solidification) laser annealing process.
A method of manufacturing a thin film transistor, comprising the steps of:
- providing a silicon layer on a substrate;
- forming a gate electrode on the silicon layer;
- ion-doping the silicon layer and the gate electrode to define source and drain regions;
- and
- activating the gate electrode and the source and drain regions using an SLS (sequential lateral solidification) laser annealing process.
Dependencies are inferred from the claim text.