Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
AssigneeAdvanced Micro Devices, Inc.
InventorBin Yu
Life of this patent
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Abstract
A method of manufacturing an integrated circuit with a channel region containing germanium. The method can provide a double planar gate structure. The gate structure can be provided over lateral sidewalls of channel region. The semiconductor material containing germanium can increase the charge mobility associated with the transistor. An epitaxy process can form the channel region. A silicon-on-insulator can be used.
Claims20
A method of manufacturing an integrated circuit on a substrate, the method comprising:
- providing a fin area in the substrate;
- narrowing a width of the fin area by growing a sacrificial material on first sidewalls of the fin area and subsequently removing the sacrificial material to form second sidewalls on the fin area;
- providing silicon-germanium material on the second sidewalls of the fin area;
- providing a dielectric layer over the slicon-germanium material;
- and
- providing a gate conductor over the dielectric layer.
A method of manufacturing an integrated circuit on a substrate, the method comprising:
- providing a fin area in the substrate, the fin area having sidewalls;
- providing silicon-germanium material on sidewalls of the fin area;
- providing a sacrificial oxide on the sidewalls of the fin area and removing the sacrificial oxide before providing the silicon-germanium material on the sidewalls;
- providing a dielectric layer over the silicon-germanium material;
- and
- providing a gate conductor over the dielectric layer.
A process of forming a transistor having a semiconductor-germanium channel region, the process comprising:
- forming an island of semiconductor material on a substrate, the island having a cap layer;
- growing oxide material on sidewalls of the island;
- removing the oxide material;
- forming a single crystalline semiconductor-germanium layer on the sidewalls of the island;
- and
- providing a gate structure over at least a portion of the island.
Dependencies are inferred from the claim text.