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US 6,475,865 B1Granted
Method of fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsGwo-Shii Yang, Tri-Rung Yew, Coming Chen, Water Lur
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Abstract
A method for fabricating a semiconductor device. A shallow trench isolation is formed by forming a well region, a gate oxide layer and a wiring layer prior to forming a trench in the substrate. The trench is then filled with silicon oxide layer doped with germanium, nitrogen, titanium or other refractory metal. In addition, a MOS device is also fabricated with a gate buried in the substrate with a shallow trench isolation filled with the doped silicon oxide layer formed therein.
Claims6
A method of fabricating a metal-oxide semiconductor in a semiconductor substrate comprising:
- providing a semiconductor substrate having an active region isolated by a shallow isolation trench formed thereon;
- filling the shallow isolation trench with a doped silicon oxide, wherein the doped silicon oxide layer comprises dopants selected from the group consisting of germanium, nitrogen, and refractory metal;
- forming a trench in the active region of the semiconductor substrate;
- forming a spacer on a sidewall of the trench;
- forming a gate oxide layer on a bottom surface of the trench;
- filling the trench with a conductive layer to form a gate;
- and
- forming source/drain region in the substrate between the shallow trench isolation and the spacer of the gate.
5 more elements
Dependencies are inferred from the claim text.