Capacitors and capacitor forming methods

A capacitor forming method comprising:

• forming a first capacitor electrode layer comprising tungsten nitride over a substrate;
• oxidizing at least some of the tungsten nitride under conditions effective to form a first capacitor dielectric layer at least a majority of which comprises tungsten trioxide in contact with the first capacitor electrode layer;
• and
• forming a second capacitor electrode layer over the first capacitor dielectric layer.

A capacitor forming method comprising:

• forming a first capacitor electrode layer over a substrate;
• forming a high k capacitor dielectric layer over the first capacitor electrode layer;
• forming a tungsten nitride comprising layer over the high k dielectric layer;
• oxidizing the tungsten nitride under conditions effective to transform substantially all of it to a tungsten oxide comprising layer received over the high k capacitor dielectric layer, at least a majority portion of the tungsten oxide being in tungsten trioxide form;
• and
• forming a second capacitor electrode layer over the tungsten oxide comprising layer.

A capacitor forming method comprising:

• forming a first capacitor electrode layer over a substrate, the first capacitor electrode layer not comprising tungsten nitride;
• forming a tungsten nitride comprising layer over the first capacitor electrode comprising layer;
• oxidizing at least some of the tungsten nitride under conditions effective to form a layer at least a majority of which comprises tungsten trioxide;
• and
• after the oxidizing, forming a second capacitor electrode layer over the layer comprising tungsten trioxide.

A capacitor comprising:

• a first capacitor electrode;
• a second capacitor electrode;
• a capacitor dielectric region intermediate the first and the second capacitor electrodes, the capacitor dielectric region comprising:
• a first tungsten trioxide comprising layer in contact with the first capacitor electrode;
• a second tungsten trioxide comprising layer in contact with the second capacitor electrode;
• and
• a high k dielectric layer intermediate the first and the second tungsten trioxide comprising layers.