Process for gate oxide side-wall protection from plasma damage to form highly reliable gate dielectrics
AssigneeAgere Systems Inc.
InventorsKean Syn Cheah, Hooi Peng Low, Yi Ma
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Abstract
The present invention provides a method for manufacturing a semiconductor device. The method includes forming an oxidized portion of an initial gate structure and a sacrificial gate layer, and further includes removing the oxidized portion of the initial gate structure and the sacrificial gate layer to form a transistor device. In an exemplary embodiment, the method further includes subjecting a patterned gate layer to an etch to form the initial gate structure and the sacrificial layer. In an advantageous embodiment, the gate layer is patterned having a width greater than a predetermined design width.
Claims17
A method for manufacturing a semiconductor device, comprising:
- etching a gate layer to form an initial gate structure and a sacrificial gate layer;
- oxidizing a portion of an initial gate structure and substantially all of a sacrificial gate layer;
- removing the oxidized portion of the initial gate structure and the oxidized sacrificial gate layer to form a gate;
- and
- forming oxide spacers adjacent the gate.
A method for manufacturing an integrated circuit, comprising:
- forming transistors, including;
- etching a gate layer to form an initial gate structure and a sacrificial gate layer;
- oxidizing a portion of an initial gate structure and substantially all of a sacrificial gate layer;
- removing the oxidized portion of the initial gate structure and the oxidized sacrificial gate layer to form a gate;
- and
- forming oxide spacers adjacent the gate;
- and
- forming interconnects to connect the transistors to form an integrated circuit.
Dependencies are inferred from the claim text.