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US 6,475,840 B1Granted
Semiconductor device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkiharu Miyanaga, Hisashi Ohtani, Satoshi Teramoto
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Abstract
An insulated gate field effect transistor comprises a silicon channel region. The silicon is crystallized by heat annealing while a suitable metal element such as nickel helps the crystallization. The crystallization proceeds in the silicon film laterally from the portion where the nickel is directly introduced. The TFT is arranged in such a manner that the source-drain direction of the TFT is aligned with the direction of the crystal growth or intersects with the crystal growth direction at a desired direction.
Claims54
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film;
- and
- removing said first film after said heating step.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film;
- removing said first film after said heating step;
- etching said semiconductor film into a semiconductor layer;
- and
- forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
6 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film by irradiating light from a lamp;
- and
- removing said first film after said heating step.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film by irradiating light from a lamp;
- removing said first film after said heating step;
- etching said semiconductor film into a semiconductor layer;
- and
- forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
6 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing a selected portion of said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material, wherein a crystal grows from said selected portion to a region where said crystallization promoting material is not provided;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film;
- and
- removing said first film after said heating step.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing a selected portion of said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material, wherein a crystal grows from said selected portion to a region where said crystallization promoting material is not provided;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film;
- removing said first film after said heating step;
- etching said semiconductors film into a semiconductor layer;
- and
- forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween.
6 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film;
- removing said first film after said heating step;
- and
- introducing an impurity element into said semiconductor film.
5 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material;
- forming a first film containing silicon and a gettering element over said semiconductor film after said crystallizing step;
- heating said semiconductor film and said first film;
- removing said first film after said heating step;
- etching said semiconductor film into a semiconductor layer;
- forming a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween;
- and
- introducing an impurity element into selected portions of said semiconductor layer using said gate electrode as a mask.
7 more elements
Dependencies are inferred from the claim text.