Manufacturing of TFT device by backside laser irradiation

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• forming a gate insulating film over said semiconductor layer;
• forming a gate electrode over said gate insulating film;
• forming source and drain regions by introducing ions of an impurity into said semiconductor layer using said gate electrode and said gate insulating film as masks;
• forming lower impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate insulating film for controlling impurity concentration thereof;
• and
• activating said source and drain regions and said lower impurity concentration regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam is a second harmonic of a YAG laser.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• selectively introducing ions of an impurity into said semiconductor layer to form impurity regions after the crystallization;
• activating said ions of impurity in said impurity regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam is a second harmonic of a YAG laser.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• forming a gate insulating film over said semiconductor layer after the crystallization;
• forming a gate electrode over said gate insulating film;
• forming higher impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate electrode and said gate insulating film as masks;
• forming lower impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate insulating film for controlling impurity concentration thereof;
• and
• activating the introduced impurity in said higher and lower impurity concentration regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam has a wavelength of 532 nm.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• forming a gate insulating film over said semiconductor layer after the crystallization;
• forming a gate electrode over said gate insulating film;
• forming source and drain regions by introducing ions of an impurity into said semiconductor layer using said gate electrode and said gate insulating film as masks;
• forming lower impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate insulating film for controlling impurity concentration thereof;
• and
• activating said source and drain regions and said lower impurity concentration regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam has a wavelength of 532 nm.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• selectively introducing ions of an impurity into said semiconductor layer to form impurity regions after the crystallization;
• activating said ions of impurity in said impurity regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam has a wavelength of 532 nm.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• selectively introducing ions of an impurity into said semiconductor layer to form source and drain regions after the crystallizations;
• activating said source and drain regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam is a second harmonic of a YAG laser.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• selectively introducing ions of an impurity into said semiconductor layer to form source and drain regions after the crystallization;
• activating said source and drain regions by irradiating a laser beam from a rear side of said substrate,
• wherein said laser beam has a wavelength of 532 nm.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a substrate;
• crystallizing said semiconductor layer by irradiating a laser beam;
• forming a gate insulating film over said semiconductor layer after the crystallization;
• forming a gate electrode over said gate insulating film;
• forming source and drain regions by introducing ions of an impurity into said semiconductor layer using said gate electrode and said gate insulating film as a mask;
• forming lower impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate insulating film for controlling impurity concentration thereof;
• and
• activating said source and drain regions and said lower impurity concentration regions by irradiating a laser beam from a rear side of said substrate.