Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideomi Suzawa, Yoshihiro Kusuyama
Life of this patent
Estimating the term…
Abstract
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.
Claims35
A method of manufacturing a semiconductor device, comprising the steps of;
- forming a first conductive;
- forming an inorganic insulating film over said first conductive film;
- forming an organic resin film over said inorganic insulating film;
- forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process by etching with a selective ratio of an etching rate of said inorganic insulating film to an etching rate of said organic resin film from 1.6 to 2.9;
- and
- forming a second conductive film in said contact hole.
A method of manufacturing a semiconductor device, comprising the steps of;
- forming a first conductive film;
- forming an inorganic insulating film over said first conductive film;
- forming an organic resin film over said inorganic insulating film;
- forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process to form an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole into a taper shape having an angle range of 30° to 80° from a horizontal surface;
- and
- forming a second conductive film in said contact hole.
A method of manufacturing a semiconductor device, comprising the steps of;
- forming a first conductive film;
- forming an inorganic insulating film over said first conductive film;
- forming an organic resin film over said inorganic insulating film;
- forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process to form an edge portion of said organic resin film that comes in contact with said inorganic insulating film into a taper shape having an angle range of 50° to 90° from a horizontal surface;
- and
- forming a second conductive film in said contact hole.
Dependencies are inferred from the claim text.