Method for forming thin film transistor

A method for forming a thin film transistor, said method comprising:

• providing a substrate;
• forming an amorphous silicon on said substrate;
• patterning said amorphous silicon to form an active region pattern having a source region pattern, a drain region pattern and a tilt channel pattern;
• performing a chemical displacement palladium electroless plating process over said active region pattern to form palladium clusters adjacent the sidewall of said active region pattern;
• and
• performing a metal induced lateral crystallization process on said active region pattern to crystallize said active region pattern of amorphous silicon to form an active region of polysilicon having a source region, a drain region and a tilt channel, wherein said palladium clusters adjacent the sidewall of said tilt channel pattern induce formations of parallel polysilicon grains and render the grain orientation of polysilicon in said tilt channel perpendicular to a gate electrode which is subsequently formed above said tilt channel.

A method for forming a thin film transistor, said method comprising:

• providing a substrate having an amorphous silicon thereon;
• patterning said amorphous silicon to form an active region pattern having a source region pattern, a drain region pattern and a tilt channel pattern;
• performing a metal electroless plating process over said active region pattern to form metal clusters adjacent the sidewall of said active region pattern;
• and
• performing a metal induced lateral crystallization process on said active region pattern for at least about 12 hours to crystallize said active region pattern of amorphous silicon to form an active region of polysilicon having a source region, a drain region and a tilt channel, wherein said metal clusters adjacent the sidewall of said tilt channel pattern induce formations of parallel polysilicon grains and render the grain orientation of polysilicon in said tilt channel perpendicular to a gate electrode which is subsequently formed above said tilt channel.