Method for formation and production of matrices of high density light emitting diodes

Abstract

A method for the production and formation of microscopic semiconductor light emitting diodes Is set out. The method comprises the steps of: producing a semiconductor light emitting device (100) including a pn-junction (24) and metallization layers (6, 7); applying an etching mask (9-11) with a preset structure on one side of the semiconductor device (100), whereby the masked areas of the arrangement form and correspond to the diodes to be formed (30); applying a carrier (8, 12) on the other side of the semiconductor device (100); vertically etching the semiconductor material in the openings of the etching mask (9-11) to the carrier (8, 12) and thereby producing a diode arrangement containing a multiple number of diodes (30) below the masked areas. In addition, the method further comprises: removing the etching mask (9-11); providing an accommodating device (20) containing slots (22) with an arrangement and form that correspond to the numerous diodes, whereby the slots are suited for the reception of the diodes (30) therein; engaging the diode arrangement into the accommodating device (20); and removing of the carrier (8, 12). This method can be used for the production of a LED display device having a high pixel density.

Dependencies are inferred from the claim text.