Method of measuring temperature, method of taking samples for temperature measurement and method for fabricating semiconductor device

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance, wherein

• the amorphous region formed in a semiconductor region of the substrate is doped with oxygen at a critical concentration for holding the reordering rate during the heating nearly constant from the initiation of the heating.

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance, wherein

• the amorphous region is formed in a semiconductor region of the substrate by implanting therein ions of a IV group element.

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance, wherein

• the amorphous region is formed in a semiconductor region of the substrate by implanting therein ions of at least one of arsenic (As), phosphorus (P), a halogen element, and an inert gas element.

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance, wherein

• a plurality of amorphous regions are formed in a plurality of portions of a semiconductor region of the substrate by implanting ions therein under different conditions.

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance, the method comprising the steps of:

• (a) forming a first amorphous region in a first semiconductor region located in a top surface of the substrate by implanting ions therein;
• and
• (b) forming a second amorphous region in a second semiconductor region located in a back surface of the substrate by implanting ions therein.

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance, wherein

• the amorphous region is formed in a semiconductor region of the substrate by implanting ions therein under such a condition that a temperature of the substrate is lower than −10° C.

A method of producing a sample for temperature measurement performed by heating an amorphous region of a substrate for a given time, determining a reordering rate at which the amorphous region is recrystallized, wherein the reordering rate is the thickness of the amorphous region per unit time, and thereby measuring a temperature of the amorphous region during the heating based on a relationship between the reordering rate of the amorphous region and a heating temperature, which has been prepared in advance the method comprising the steps of:

• (a) forming the amorphous region in a semiconductor region of the substrate by implanting ions therein;
• and
• (b) annealing the amorphous region at a temperature in the range of 300 to 450° C.

A method for fabricating a semiconductor device in a semiconductor region of a substrate, the method comprising

• a preamorphous step of forming an amorphous region in the semiconductor region by implanting ions therein under such a condition that a temperature of the substrate is lower than −10° C., wherein
• after the preamorphous step, at least one of the step of implanting boron ions into the amorphous region and the step of siliciding the amorphous region is performed.

A method for fabricating a semiconductor device in a semiconductor region of a substrate, the method comprising

• a preamorphous step of forming an amorphous region in the semiconductor region by implanting ions therein and annealing the amorphous region at a temperature in the range of 300 to 450° C., wherein
• after the preamorphous step, at least one of the step of implanting boron ions into the amorphous region and the step of siliciding the amorphous region is performed.

A method for fabricating a semiconductor device in a semiconductor region of a substrate, the method comprising the steps of:

• forming a first amorphous region in a first semiconductor region located in a top surface of the substrate by implanting ions therein and forming a second amorphous region in a second semiconductor region located in a back surface of the substrate by implanting ions therein;
• and
• determining, in a process of heating the first and second amorphous regions, respective temperatures of the first and second amorphous regions based on respective reordering rates of the first and second amorphous regions, determining a heat conductivity of the substrate based on a temperature difference between the first and second amorphous regions, and controlling the respective temperatures of the first and second amorphous regions of the substrate.