MOCVD and annealing processes for C-axis oriented ferroelectric thin films
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Wei Pan, Sheng Teng Hsu
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Abstract
A method of fabricating a c-axis ferroelectric thin film includes preparing a substrate; depositing a layer of ferroelectric material by metal organic chemical vapor deposition, including using a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140° C. to 200° C.; and annealing the substrate and the ferroelectric material at a temperature between about 500° C. to 560° C. for between about 30 minutes to 120 minutes.
Claims22
A method of fabricating a c-axis ferroelectric thin film comprising:
- preparing a substrate;
- depositing a layer of amorphous ferroelectric material by metal organic chemical vapor deposition, including using a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140° C. to 200° C.;
- and
- annealing the substrate and the ferroelectric material at a temperature between about 500° C. to 560° C. for between about 30 minutes to 120 minutes to produce an amorphous ferroelectric thin film having a grain size of about 0.8 μm.
A method of fabricating a c-axis ferroelectric thin film comprising:
- preparing a substrate;
- depositing a layer of amorphous ferroelectric material in a MOCVD chamber at a deposition temperature of between about 300° C. and 450° C. from the group of materials consisting of Pb5Ge3O11 (PGO), SrBi2Ta2O9 (SBT), Bi4Ti3O12 (BTO) and PbZrXTi1−XO3 (PZT) by metal organic chemical vapor deposition, including using a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140° C. to 200° C. to produce an amorphous ferroelectric thin film having a grain size of about 0.8 μm;
- and
- annealing the substrate and the ferroelectric material at a temperature between about 500° C. to 560° C. for between about 30 minutes to 120 minutes.
A method of fabricating a c-axis ferroelectric thin film comprising:
- preparing a substrate;
- depositing a layer of amorphous ferroelectric material by metal organic chemical vapor deposition, including preparing a precursor solution of [Pb(thd)2] and [Ge(ETO)4], in a molar ratio of 5:3, dissolved in a mixed solvent including a solvent taken from the group of solvents consisting of butyl ether and tetrahydrofuran, isopropanol and tetraglyme, in a molar ratio of 8:2:1, and using a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140° C. to 200° C. to produce an amorphous ferroelectric thin film having a grain size of about 0.8 μm;
- and
- annealing the substrate and the ferroelectric material at a temperature between about 500° C. to 560° C. for between about 30 minutes to 120 minutes.
Dependencies are inferred from the claim text.