Ferromagnetic material and magnetic apparatus employing the ferromagnetic material

A ferromagnetic material comprising:

• a substrate with a row of dangling bonds constructed by extracting H atoms along an Si dimer row from the H-terminated (100) surface of the substrate;
• and
• a molecule of three As atoms arranged on the surface of said substrate,
• wherein chemical bonds are substantially formed between the molecule and two adjacent dangling bonds only so that an electronic band of an area of the two adjacent dangling bonds and the molecule has a flat part at the Fermi level.

A magnetic device comprising:

• a ferromagnetic material comprising basic unit structures each consisting of three nonmagnetic atoms or molecules arranged on a substrate of nonmagnetic atoms, the atoms being arranged so that a chemical bond is formed between a first atom or molecule and a third atom or molecule, a chemical bond is formed between a second atom or molecule and the third atom or molecule, and a chemical bond or an electron path not passing the third atom is formed between the first atom or molecule and the second atom or molecule in each of the basic unit structures, and an electronic energy band having a flat part at the Fermi level;
• and
• a conductive material disposed so as to be able to apply an electric field to the ferromagnetic material,
• wherein said atoms or molecules consist of As atoms;
• and
• wherein an electron spin state is switched between a paramagnetic state and a ferromagnetic state by an electric field applied to the ferromagnetic material by the conductive material.

A magnetoresistance effect element comprising:

• a substrate of nonmagnetic atoms;
• cascaded regions of a ferromagnetic material comprising basic unit structures each consisting of three nonmagnetic atoms or molecules arranged on the substrate, the atoms being arranged so that a chemical bond is formed between a first atom or molecule and a third atom or molecule, a chemical bond is formed between a second atom or molecule and the third atom or molecule, and a chemical bond or an electron path not passing the third atom is formed between the first atom or molecule and the second atom or molecule in each of the basic unit structures, and an electronic energy band having a flat part at the Fermi level, wherein said atoms or molecules consist of As atoms;
• and
• cascaded regions of a nonmagnetic material comprising basic unit structures each consisting of a plurality of atoms arranged so that an electronic energy band does not have any flat part at the Fermi level,
• wherein the position of one of those atoms being different from that of the atom of the basic unit structure of the ferromagnetic material.

A magnetoresistance effect element comprising:

• a substrate of nonmagnetic atoms;
• cascaded regions of a ferromagnetic material comprising basic unit structures each consisting of three nonmagnetic atoms or molecules arranged on the substrate, the atoms being arranged so that a chemical bond is formed between a first atom or molecule and a third atom or molecule, a chemical bond is formed between a second atom or molecule and the third atom or molecule, and a chemical bond or an electron path not passing the third atom is formed between the first atom or molecule and the second atom or molecule in each of the basic unit structures, an electronic energy band having a flat part of the Fermi level, wherein said atoms or molecules consist of As atoms;
• and
• cascaded regions of a nonmagnetic material comprising basic unit structures each consisting of a plurality of atoms arranged so that an electronic energy band does not have any flat part at the Fermi level and the basic unit structure is nonconductive,
• wherein the number of the atoms of the basic unit structure is less than that of the atoms of the basic unit structure of the ferromagnetic material by one.