Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma

A process for sputter depositing a layer of material into a via or channel of a workpiece, comprising:

• providing a sputtering gas into a chamber;
• applying RF power to a coil to ionize the sputtering gas to form a plasma;
• sputtering a target to direct sputtered target material toward a workpiece;
• ionizing a portion of said sputtered target material before it is deposited onto said workpiece;
• reducing said RF power to said coil while continuing sputtering of said target so as to reduce ionization of said sputtered target material before it is deposited onto said workpiece.

A process for sputter depositing a layer of material into an opening of a workpiece, said opening having a bottom and sidewalls, said process comprising:

• sputtering a target to direct sputtered target material toward a workpiece;
• ionizing a portion of said sputtered target material before it is deposited onto said workpiece so that sputtered target material which is deposited in said opening is deposited primarily on the bottom of said opening;
• and
• reducing said ionizing of said portion of said sputtered target material so that sputtered target material deposited in said opening is deposited primarily on the sidewalls of said opening.

A process for sputter depositing layers of materials into a workpiece structure having a sidewall and a bottom, comprising:

• sputtering a first target in a first chamber to direct sputtered first target material toward a workpiece;
• ionizing a portion of said sputtered first target material before it is deposited onto said workpiece so that sputtered first target material which is deposited on said structure is deposited primarily on the bottom of said structure;
• and
• reducing said ionizing of said sputtered first target material so that sputtered first target material deposited on said structure is deposited primarily on the sidewalls of said structure;
• transferring said workpiece to a second chamber;
• sputtering a second target to sputter a second target material onto said structure of said workpiece to deposit on top of said first target material deposited on said structure.

A process for sputter depositing layers of materials into a via or channel of a workpiece, comprising:

• providing a sputtering gas into a chamber;
• applying RF power to a coil to ionize the sputtering gas to form a plasma;
• sputtering a first target to direct sputtered first target material toward a workpiece;
• ionizing a first portion of said sputtered first target material at a first level before it is deposited onto said workpiece;
• ionizing a second portion of said first target material at a second level before it is deposited onto said workpiece;
• transferring said workpiece to a second chamber;
• and
• sputtering a second target to sputter a second target material toward said workpiece.

An apparatus for energizing a plasma within a semiconductor fabrication system to direct sputtered material onto a workpiece, the apparatus comprising:

• a semiconductor fabrication chamber having a plasma generation area within said chamber and containing a sputtering gas;
• a coil carried by said chamber and positioned to couple energy into said plasma generation area to ionize said sputtered material;
• and
• a controller for controlling said ionization to ionize a first portion of said sputtered material at a first level before it is deposited onto said workpiece and to ionize a second portion of said sputtered material at a second level before it is deposited onto said workpiece.

A semiconductor fabrication system for sputtering multiple layers of materials onto a workpiece, the system comprising:

• a first semiconductor fabrication chamber having a plasma generation area within said chamber and containing a sputtering gas;
• said first chamber having a first target of a first target material which includes a material selected from the group consisting of titanium, tantalum, aluminum, copper and tungsten, said first target providing a source of sputtered first target material;
• a coil carried by said first chamber and positioned to couple energy into said plasma generation area to ionize said first target material sputtered from said target to form an underlayer of said first material on said workpiece;
• a controller for controlling said ionization to ionize a first portion of said sputtered first target material at a first level before it is deposited onto said workpiece and to ionize a second portion of said sputtered first target material at a second level before it is deposited onto said workpiece
• a second semiconductor fabrication chamber;
• and
• said second chamber having a second target of a second target material which includes a material selected from the group consisting of aluminum and copper, for forming a layer on said underlayer.

An apparatus for energizing a plasma within a semiconductor fabrication system to sputter material onto a workpiece, the apparatus comprising:

• a semiconductor fabrication chamber having a plasma generation area within said chamber;
• a coil carried by said chamber and positioned to couple energy into said plasma generation area to ionize said material prior to deposition onto said workpiece;
• an RF generator coupled to said coil to provide RF power to said coil;
• and
• control means for controlling said RF generator to provide power at a level during an initial portion of a sputter deposition and to provide power at a reduced level including zero power in a subsequent portion of said sputter deposition.

A semiconductor fabrication system for sputtering multiple layers of materials onto a workpiece, the system comprising:

• a first semiconductor fabrication chamber having a plasma generation area within said chamber and a target of a first target material which includes a material selected from the group consisting of titanium, tantalum, aluminum, copper and tungsten;
• a coil carried by said chamber and positioned to couple energy into said plasma generation area to ionize said first target material prior to deposition onto said workpiece;
• an RF generator coupled to said coil to provide RF power to said coil;
• and
• control means for controlling said RF generator to provide power at a level during an initial portion of a sputter deposition and to provide power at a reduced level including zero power in a subsequent portion of said sputter deposition;
• a second semiconductor fabrication chamber;
• and
• said second chamber having a second target of a second target material which includes a material selected from the group consisting of aluminum and copper, for forming a layer on said underlayer.