Dry etching device and dry etching method
AssigneeNEC Corporation
InventorHideki Harano
Life of this patent
Estimating the term…
Abstract
An inductively coupled plasma dry etching device includes etching chamber 10 and ceramic dome 20. Etching chamber 10 is provided with gate 11 and gas injection port 12. Ceramic ESC stage 31 is provided inside etching chamber 10, and outside etching chamber 10, pressure gauge 13 and pressure controller 40 are connected, and high-frequency power supply 23 is connected to ESC stage 31. First coil 21 and second coil 22 are arranged in helical form on the outside of dome 20 such that turns of one coil lie between turns of the other coil, first coil 21 being connected to second high-frequency power supply 24 and second coil 22 being connected to third high-frequency power supply 25. The high-frequency power supplies are switched at a prescribed time interval.
Claims3
An inductively coupled plasma dry etching device in which etching is carried out by causing an active gas plasma to act on a wafer secured inside an etching chamber under reduced pressure;
- wherein:
- said dry etching device comprises:
- an etching chamber,
- a plasma generation means;
- a wafer securing means;
- an etching gas supply means;
- and
- a gas pressure control means;
- said plasma generation means includes:
- two high-frequency power supplies that can be switched;
- two coils for high-frequency power application that are each connected to a respective one of said two high-frequency power supplies;
- and
- a switch for switching two high-frequency power supplies at a prescribed time interval;
- and said two coils for high-frequency power application are each arranged in proximity to the other such that turns of each coil lie between turns of the other coil.
Dependencies are inferred from the claim text.