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US 6,475,072 B1Granted
Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)
AssigneeInternational Business Machines Corporation
InventorsDonald F. Canaperi, Jack Oon Chu, Guy M. Cohen, Lijuan Huang, John Albrecht Ott, Michael F. Lofaro
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Abstract
A method and apparatus is described incorporating a semiconductor substrate, a CMP tool, a brush cleaning tool, and a chemical wafer cleaning tool. The CMP is performed with a down force of 1 psi, a backside air pressure of 0.5 psi, a platen speed of 50 rpm, a crarrier speed of 30 rpm and a slurry flow rate of 140 milliliters per minute.
Claims16
An apparatus for polishing and smoothing a wafer surface suitable for performing wafer to wafer bonding comprising:
- a semiconductor substrate,
- a first layer of material formed on said substrate,
- a CMP tool,
- a brush cleaning tool,
- a chemical wafer cleaning tool, and
- a wafer bonding tool.
3 more elements
Dependencies are inferred from the claim text.