Back to results
US 6,473,335 B2Granted
MRAM configuration
AssigneeInfineon Technologies AG
InventorsThomas Böhm, Helmut Kandolf, Stefan Lammers
Life of this patent
Estimating the term…
Abstract
A magneto-resistive random access memory (MRAM) configuration is described in which line driver circuits are respectively assigned via connecting nodes to two memory cell arrays, with the result that the area for the driver circuits can practically be halved. Therefore a space-saving architecture and a more efficient MRAM configuration is obtained.
Claims5
A magneto-resistive random access memory (MRAM) configuration, comprising:
- at least two memory cell arrays, each of said memory cell arrays having word lines, bit lines crossing said word lines, and memory cells disposed at crossover points between said word lines and said bit lines;
- connecting nodes, one of said connecting nodes disposed between and connecting each of said memory cell arrays to each other;
- line driver circuits connected to at least one of said word lines and said bit lines, said line driver circuits are respectively connected to said connecting nodes between said memory cell arrays;
- switching transistors, one of said switching transistors disposed between one of said memory cell arrays and one of said connecting nodes so that said line driver circuits are respectively assigned to different ones of said memory cell arrays;
- and
- elements having an adjustable voltage drop, one of said elements disposed between one of said connecting nodes and a ground potential connecting said connecting nodes to the ground potential.
3 more elements
Dependencies are inferred from the claim text.