In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads
AssigneeInternational Business Machines Corporation
InventorsNeil Smith, Bo Yang
Life of this patent
Estimating the term…
Loading patent…
AssigneeInternational Business Machines Corporation
InventorsNeil Smith, Bo Yang
Estimating the term…
An improved MR sensor has a ferromagnetic free layer whose magnetization is stabilized by an in-stack three layers combination, which including an auxiliary ferromagnetic layer proximate the ferromagnetic free layer, a non-magnetic spacer layer disposed between the ferromagnetic free layer and the auxiliary ferromagnetic layer, and a pinning layer adjacent to the auxiliary ferromagnetic layer. The pinning layer is directly exchange-coupled to the auxiliary ferromagnetic layer such that the magnetization of the auxiliary ferromagnetic layer is pinned. The non-magnetic spacer layer is made of a material, such as Ru, which induces an anti-ferromagnetic exchange coupling between the ferromagnetic free layer and the auxiliary ferromagnetic layer. The magnetization of the ferromagnetic free layer is stabilized in a single-domain state by the combination of the anti-ferromagnetic exchange-coupling and magnetostatic coupling between the ferromagnetic free layer and the auxiliary ferromagnetic layer.
A magnetoresistive (MR) sensor for sensing an external magnetic field comprising:
A MR sensing head comprising:
A disk drive comprising:
Dependencies are inferred from the claim text.