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US 6,473,256 B2Granted
Method and apparatus for a 200 NS write to read switch time circuit
AssigneeTexas Instruments Incorporated
InventorsHae-Seok Cho, Indumini Ranmuthu
Life of this patent
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Abstract
The present invention includes a circuit which can achieve a 200 nano second write to read time. The present invention eliminates a switch in the RMR measurement circuit.
Claims3
A write to read switching circuit to switch from a write mode to a read mode comprising:
- a head circuit to write and read information;
- an amplifier connected to said head circuit,
- a transconductional circuit directly connected to said amplifier, said transconductional circuit including a single pole,
- a reference generate circuit connected to internal ground, and
- a measurement circuit connected to said head circuit;
- wherein said head circuit switches from said write mode to said read mode.
3 more elements
Dependencies are inferred from the claim text.