Inductor-capacitor resonant RF switch

A inductor-capacitor resonance RF switching device comprising:

• a microelectronic mechanical switch comprising:
• a first dielectric layer overlying a substrate;
• a down electrode overlying said first dielectric layer;
• a second dielectric layer overlying said down electrode;
• an up electrode overlying said down electrode with said second dielectric layer therebetween;
• a bridge post overlying said first dielectric layer but not overlying said down electrode and said up electrode;
• and
• a membrane suspended over said up electrode wherein one end of said membrane is fixed to top of said bridge post, wherein an electrostatic potential between said membrane and said down electrode will cause said membrane to flex down toward said down electrode, wherein said flexing downward causes said membrane to contact said up electrode, and wherein said flexing of said membrane will cause the capacitance of said inductor-capacitor resonance RF switching device to vary;
• and
• a spiral inductor comprising a metal line configured in a spiraling pattern with a first end connected to said bridge post and a second end forming an output node.

A method to form a microelectronic mechanical switch device in the manufacture of an integrated circuit device comprising:

• providing a down electrode overlying a substrate with a first dielectric layer therebetween;
• providing a second dielectric layer overlying said down electrode layer;
• forming an up electrode overlying said second dielectric layer;
• depositing a first silicon dioxide layer overlying said up electrode and said second dielectric layer;
• depositing a silicon nitride layer overlying said first silicon oxide layer;
• depositing a second silicon dioxide layer overlying said silicon nitride layer;
• patterning said first silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to form deep trenches for planned bridge posts;
• patterning said second silicon dioxide layer and said silicon nitride layer to form shallow trenches for planned membrane wherein said second silicon dioxide layer and said silicon nitride layer are etched through to said first silicon dioxide layer and wherein said shallow trenches connect to said deep trenches;
• depositing a metal layer overlying said second silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to fill said deep trenches and said shallow trenches;
• polishing down said metal layer to said second silicon dioxide layer to complete said bridge posts and said membrane;
• and
• etching away said second silicon dioxide layer, said silicon nitride layer and said first silicon dioxide layer to release said membrane and to complete said microelectronic mechanical switch device in the manufacture of said integrated circuit device.