Method for producing a contact structure

A method of producing a contact structure for electrical communication with a contact target, comprising the following steps of:

• providing a silicon substrate cut in a (100) crystal plane;
• applying a first photolithography process on an upper surface of said silicon substrate for forming an etch stop layer on said silicon substrate;
• forming a first insulation layer on said etch stop layer;
• forming a second insulation layer on a bottom surface of said silicon substrate;
• applying a second photolithography process on said second insulation layer for forming an etch window in said second insulation layer;
• performing an anisotropic etch on said silicon substrate through said etch window for forming a base portion of a contactor;
• depositing conductive material on said first insulation layer for forming a conductive layer in a beam shape projected from said base portion;
• and
• mounting a plurality of contactors produced in the foregoing steps on a contact substrate in predetermined diagonal directions.