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US 6,472,763 B2Granted
Semiconductor device with bumps for pads
AssigneeFujitsu Limited
InventorsTomoyuki Fukuda, Eiji Watanabe
Life of this patent
Estimating the term…
Abstract
A conductive electrode pad is formed on a partial area of an insulating surface. An insulating film covers the electrode pad. The insulating film has an opening exposing at least a partial upper surface of the electrode pad. A barrier layer of conductive material is formed on the partial upper surface exposed on the bottom of the opening and on the surface of the insulating film near the opening. A conductive bump is adhered to the barrier layer. A step is formed on the surface of a layer under the barrier layer between an outer periphery of the barrier layer and an outer periphery of the opening.
Claims13
A semiconductor device comprising:
- a conductive electrode pad formed on a partial area of an insulating surface;
- an insulating film covering said electrode pad, said insulating film having an opening exposing at least a partial upper surface of said electrode pad;
- a barrier layer of conductive material formed on the partial upper surface exposed on a bottom of said opening and on a surface of said insulating film near the opening;
- and
- a conductive bump adhered to said barrier layer,
- wherein a step is formed on a surface of a layer under said barrier layer between an outer periphery of said barrier layer and an outer periphery of the opening,
- wherein the step is formed by a groove surrounding the opening.
4 more elements
A semiconductor device comprising:
- a conductive electrode pad formed on a partial area of an insulating surface;
- an insulating film covering said electrode pad, said insulating film having an opening exposing at least a partial upper surface of said electrode pad;
- a barrier layer of conductive material formed on the partial upper surface exposed on a bottom of said opening and on a surface of said insulating film near the opening;
- and
- a conductive bump adhered to said barrier layer,
- wherein a step is formed on a surface of a layer under said barrier layer between an outer periphery of said barrier layer and an outer periphery of the opening;
- wherein said bump contains tin as its constituent element, and said barrier layer includes a Cu layer and a layer made of conductive material different from Cu formed on the Cu layer, and a height of the step is larger than thickness of the Cu layer,
- wherein the groove or projection includes a plurality of elongated patterns as viewed along a direction normal to the insulating surface, and the groove or projection is disposed in such a manner that if a half line is rotated once about one point in the opening, the half line crosses at least one of the plurality of elongated patterns at any position during one rotation.
5 more elements
A semiconductor device comprising:
- a conductive electrode pad formed on a partial area of an insulating surface;
- an insulating film covering said electrode pad, said insulating film having an opening exposing at least a partial upper surface of said electrode pad;
- a barrier layer of conductive material formed on the partial upper surface exposed on a bottom of said opening and on a surface of said insulating film near the opening;
- and
- a conductive bump adhered to said barrier layer,
- wherein a step is formed on a surface of a layer under said barrier layer between an outer periphery of said barrier layer and an outer periphery of the opening,
- wherein the step is formed by a ridge surrounding the opening.
4 more elements
A semiconductor device comprising:
- a conductive electrode pad formed on a partial area of an insulating surface;
- an insulating film covering said electrode pad, said insulating film having an opening exposing at least a partial upper surface of said electrode pad;
- a barrier layer of conductive material formed on the partial upper surface exposed on a bottom of said opening and on a surface of said insulating film near the opening;
- and
- a conductive bump adhered to said barrier layer,
- wherein a step is formed on a surface of a layer under said barrier layer between an outer periphery of said barrier layer and an outer periphery of the opening,
- wherein said bump contains tin as its constituent element, and said barrier layer includes a Cu layer and a layer made of conductive material different from Cu formed on the Cu layer, and a height of the step is larger than thickness of the Cu layer.
4 more elements
Dependencies are inferred from the claim text.