Conductor reservoir volume for integrated circuit interconnects

An integrated circuit comprising:

• a silicon substrate having semiconductor devices provided thereon;
• a device oxide layer formed over the silicon substrate;
• a first channel oxide layer formed over the device oxide layer having a plurality of first channel openings provided therein including a plurality of conductor reservoir volumes;
• first barrier layers lining the plurality of first channel openings;
• first conductor cores filling the plurality of first channel openings and forming a plurality of first channels connected to the semiconductor devices;
• a second channel oxide layer formed over the first channel oxide layer and having a plurality of second channel and via openings provided therein;
• second barrier layers lining the plurality of second channel and via openings except over the plurality of first channels;
• second conductor cores filling the plurality of second channel and via openings to form a plurality of vias and second channels, having the plurality of vias proximate the plurality of conductor reservoir volumes at the ends of the plurality of first channels horizontally after the plurality of vias whereby conductor material migrate in operation due to electromigration from the conductor reservoir volumes into the plurality of vias wherein the volumes of the plurality of conductor reservoir volumes are sized to equal or exceed the volumes of the vias.