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US 6,472,756 B2Granted
Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus
AssigneeMicron Technology, Inc.
InventorsTrung T. Doan, Gurtej Singh Sandhu, Kirk Prall, Sujit Sharan
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Abstract
A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.
Claims8
A system, comprising:
- a memory including
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising;
- titanium silicide, wherein the titanium silicide is produced by a method comprising forming titanium silicide by plasma-assisted chemical vapor deposition (CVD) in a CVD chamber according to a first chemical process described by TiCl4+SinH2n+2+H2→TiSix+HCl, and a second chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
8 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising;
- titanium silicide formed on an exposed silicon base layer, wherein the titanium silicide is produced by a method comprising forming titanium silicide in a chemical vapor deposition chamber according to a first chemical process described by TiCl4+SinH2n+2+H2→TiSix+HCl, and a second chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
8 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising:
- titanium silicide, wherein the titanium silicide is formed by a method comprising:
- combining a titanium precursor in the presence of hydrogen in a chemical vapor deposition chamber;
- forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the titanium precursor with the silicon base layer;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
- titanium, wherein the titanium is formed by a method comprising:
- combining the titanium precursor in the presence of hydrogen in the chemical vapor deposition chamber;
- forming the titanium on an insulator defining sidewalls of the contact hole by reacting the titanium precursor with the hydrogen;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
17 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising:
- titanium silicide, wherein the titanium silicide is formed by a method comprising:
- combining TiCl4 in the presence of hydrogen in a chemical vapor deposition chamber;
- forming the titanium silicide on an exposed silicon baselayer defining a bottom of a contact hole using a first chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein x is less than or equal to 2;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
- titanium, wherein the titanium is formed by a method comprising:
- combining the TiCl4 in the presence of hydrogen in the chemical vapor deposition chamber;
- forming the titanium on an insulator defining sidewalls of the contact hole using a second chemical process described by TiCl4+H2→Ti+HCl;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
17 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising:
- titanium silicide, wherein the titanium silicide is formed by a method comprising:
- combining tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber;
- forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the tetradimethyl amino titanium with the silicon base layer;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
- titanium, wherein the titanium is formed by a method comprising:
- combining the tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber;
- forming the titanium on an insulator defining sidewalls of the contact hole by reacting the tetradimethyl amino titanium with the hydrogen;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
17 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising:
- titanium silicide, wherein the titanium silicide is formed by a method comprising:
- combining a titanium precursor and a silicon precursor in the presence of hydrogen in a chemical vapor deposition chamber;
- forming the titanium silicide on a silicon base layer by reacting the titanium precursor with the silicon precursor and by reacting the titanium precursor with the silicon base layer;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
12 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising:
- titanium silicide, wherein the titanium silicide is formed by a method comprising:
- combining TiCl4 and SinH2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1;
- forming the titanium silicide on a silicon base layer using a first chemical process described by TiCl4+SinH2n+2→TiSix+HCl and using a second chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein x is less than or equal to 2;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
12 more elements
A system, comprising:
- a memory including,
- a memory array,
- a control circuit, operatively coupled to the memory array, and
- address logic, operatively coupled to the memory array and the control circuit;
- and
- a processor coupled to the memory;
- wherein the memory includes at least one contact comprising:
- titanium silicide, wherein the titanium silicide is formed by a method comprising:
- combining Ti(N(CH3)2)4 and SinH2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1;
- forming the titanium silicide on a silicon base layer by reacting the Ti(N(CH3)2)4 with the SinH2n+2 and by reacting the Ti(N(CH3)2)4 with the silicon base layer;
- and
- operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
- titanium nitride on the titanium silicide;
- and
- a plug material on the titanium nitride.
12 more elements
Dependencies are inferred from the claim text.