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AssigneesHitachi, Ltd., Hitachi Device Engineering Co., Ltd.
InventorsMasao Kondo, Katsuyoshi Washio, Eiji Oue, Hiromi Shimamoto
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Provided is a BiCOMOS semiconductor integrated circuit device which comprises a semiconductor substrate having an insulating layer internally and partially embedded therein and a semiconductor layer deposited on the insulating layer, an insulated gate type transistor formed in the semiconductor layer, a highly-doped collector layer of a bipolar transistor embedded in an insulating-layer-free portion of the semiconductor substrate, and a low-doped collector layer disposed on the highly-doped collector layer of the bipolar transistor, wherein the height level of the lower portion of the low-doped collector layer is below the height level of the lower portion of the insulating layer so as to attain high breakdown voltage and high speed operation of the bipolar transistor.
A process for fabricating a semiconductor integrated circuit device, which comprises preparing a semiconductor wafer having an insulating layer embedded in a semiconductor region and a semiconductor layer deposited on said insulating layer, partially removing said semiconductor layer and said insulating layer therebelow to expose said semiconductor region below said semiconductor layer and said insulating layer, forming a buried highly-doped collector layer for a vertical bipolar transistor by ion implantation inside of said exposed semiconductor region, forming at least a part of a low-doped collector layer at a site inside of said semiconductor layer and over said buried highly-doped collector layer, and forming a base layer and an emitter layer each at the surface portion of said low-doped collector layer.
A process for fabricating a semiconductor integrated circuit device, which comprises preparing a semiconductor wafer having an insulating layer embedded in a semiconductor region and a semiconductor layer deposited on said insulating layer, partially forming a buried highly-doped collector layer by ion implantation, through said semiconductor layer and said insulating layer therebelow, inside of said semiconductor region below said semiconductor layer and said insulating layer, removing said semiconductor layer and said insulating layer on said buried highly-doped collector layer, forming a low-doped collector layer over said highly-doped collector layer, and forming a base layer and an emitter layer each at the surface portion of said low-doped collector layer.
Dependencies are inferred from the claim text.