Semiconductor device having bonding wires serving as external connection terminals

A semiconductor element stacking structure comprising:

• a plurality of semiconductor elements arranged in a stacked state, each of the semiconductor elements having a circuit forming surface on which electrodes are formed;
• a resin layer formed on the circuit forming surface of each of the semiconductor elements, the resin layer having an outer configuration the same as that of each of the semiconductor elements;
• a plurality of bonding wires embedded in the resin layer, one end of each of the bonding wires being connected to respective one of said electrodes and the other end of each of the bonding wires being exposed on a side surface of the resin layer and being provided with a protruding electrode;
• and
• protruding electrodes provided on a surface of a resin layer covering the circuit forming surface of a lowermost semiconductor element from among the stacked semiconductor elements, said protruding electrodes being connected to electrodes of the semiconductor elements.

A semiconductor element stacking structure comprising:

• a plurality of semiconductor elements arranged in a stacked state, each of the semiconductor elements having a circuit forming surface on which electrodes are formed;
• a resin layer extending over the circuit forming surface of each of the semiconductor elements, the resin layer having an outer configuration the same as that of each of the semiconductor elements;
• a redistribution layer provided between the circuit forming surface of each of said semiconductor elements and said resin layer;
• and
• a plurality of bonding wires embedded in the resin layer, one end of each of the bonding wires being connected to respective one of said electrodes and the other end of each of the bonding wires being exposed on a side surface of the resin layer.

A semiconductor device having a plurality of stacked semiconductor elements, comprising:

• a semiconductor element stacking structure comprising:
• a plurality of semiconductor elements arranged in a stacked state, each of the semiconductor elements having a circuit forming surface on which electrodes are formed;
• a resin layer formed on the circuit forming surface of each of the semiconductor elements, the resin layer having an outer configuration the same as that of each of the semiconductor elements;
• a plurality of bonding wires embedded in the resin layer, one end of the each of the bonding wires being connected to respective one of said electrodes and the other end of each of the bonding wires being exposed on a side surface of the resin layer;
• and
• a plurality of protruding electrodes provided on the respective exposed ends of said bonding wires;
• a wiring board provided over a bottom surface and side surfaces of said semiconductor element stacking structure;
• protruding terminals connected to the respective protruding electrodes provided on said semiconductor element stacking structure through said wiring board, the protruding terminals being provided on a side of said wiring board opposite to said semiconductor element stacking structure.

A semiconductor device having a plurality of stacked semiconductor elements, comprising:

• a semiconductor element stacking structure comprising:
• a plurality of semiconductor elements arranged in a stacked state, each of the semiconductor elements having a circuit forming surface on which electrodes are formed;
• a resin layer formed on the circuit forming surface of each of the semiconductor elements, the resin layer having an outer configuration the same as that of each of the semiconductor elements;
• a plurality of bonding wires embedded in the resin layer, one end of the each of the bonding wires being connected to respective one of said electrodes and the other end of each of the bonding wires being exposed on a side surface of the resin layer;
• and
• a plurality of protruding electrodes provided on the respective exposed ends of said bonding wires,
• wherein protruding electrodes are provided on a surface of a resin layer covering the circuit forming surface of a lowermost semiconductor element from among the stacked semiconductor elements, said protruding electrodes being connected to electrodes of the semiconductor elements;
• and the protruding electrodes aligned along a line extending in a stacking direction from among the protruding electrodes provided on the exposed ends of said bonding wires are connected by bonding wires to each other;
• a wiring board provided opposite to a surface of a resin layer covering the circuit forming surface of a lowermost semiconductor element;
• a seal resin encapsulating said semiconductor element stacking structure on said wiring board;
• and
• protruding terminals connected to the respective protruding electrodes provided on the surface of said resin layer covering the circuit forming surface of the lowermost semiconductor element in said semiconductor element stacking structure.