Stacked semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Arakawa, Yasuhito Saito, Naotake Watanabe
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AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Arakawa, Yasuhito Saito, Naotake Watanabe
Estimating the term…
A semiconductor device comprises a first wiring board and a second wiring board, wherein the first wiring board includes a first semiconductor element arranged on the underside of the first wiring board, and a second connecting section formed on the underside of the first wiring board, the second wiring board includes a second semiconductor element, and a third connecting section formed on the surface of the second wiring board, the second connecting section has a first external connecting land, the third connecting section is arranged opposite to the first external connecting land and has a second external connecting land which is smaller than the first external connecting land, and the second and third connecting sections are formed such that a combined thickness thereof provides a given space between the first semiconductor element and the second wiring board.
A stacked semiconductor device comprising:
A stacked semiconductor device comprising:
Dependencies are inferred from the claim text.