Substrate contacts and shielding devices in a semiconductor component
AssigneeTelefonaktiebolaget LM Ericsson (publ)
InventorsTomas Jarstad, Hans Norström
Life of this patent
Estimating the term…
Abstract
Apparatus and methods for manufacturing low-resistant substrate contacts in integrated circuits are disclosed. The contacts are low resistive conducting plugs and are located outside the areas of active components. The substrate is connected from the top portion in order to obtain a low resistance. Multiple metal plugs electrically interconnect the substrate of the integrated circuit with the top portion of the integrated circuit.
Claims27
A semiconductor component arranged at a surface of a substrate, the semiconductor component comprising an active part and a plurality of contact plugs of a material having a good electrical conductivity, the contact plugs arranged in at least one row positioned at a perimeter of the active part and the contact plugs extending from the surface of the semiconductor component into the substrate and having top regions located at the surface of the semiconductor component and bottom regions that terminate at an inner region of the substrate, the contact plugs being in electrical contact with the substrate at least in said bottom regions, wherein the bottom regions of the contact plugs comprise electrical contact enhancing means that comprise at least one of an additional diffusion and doping layer, thereby forming an electrical interconnection between the inner region of the substrate and the surface, for shielding the active part of the semiconductor component from electrical fields and electrical currents in the substrate.
A shielded electrical signal conductor path in a semiconductor structure comprising a semiconductor substrate, the shielded electrical signal conductor path comprising a signal conductor and shielding means, the shielding means comprising a plurality of contact plugs of a material having a good electrical conductivity, the contact plugs arranged in at least one first row that extends along a first side of the signal conductor and in at least one second row that extends along a second, opposite side of the signal conductor and the contact plugs extending from the surface of the semiconductor structure into the semiconductor substrate and having top regions located at the surface of the semiconductor structure and bottom regions that terminate at an inner region of the semiconductor substrate, the contact plugs being in electrical contact with the semiconductor substrate at least in said bottom regions, thereby forming an electrical interconnection between the inner region of the substrate and the surface, for shielding the signal conductor from electrical fields and electrical currents in the substrate, wherein the shielding means further comprise metal planes in the semiconductor structure for shielding the signal conductor in a vertical direction and the contact plugs extend a distance into the semiconductor substrate such that the bottom regions of the plugs reach at least a closest metal plane of a plurality of metal planes that is closest to the surface of the substrate, the plurality of metal planes being located underneath the signal conductor.
A shielded electrical signal conductor path in a semiconductor structure comprising a semiconductor substrate, the shielded electrical signal conductor path comprising a signal conductor and shielding means, the shielding means comprising a plurality of contact plugs of a material having a good electrical conductivity, the contact plugs arranged in at least one first row that extends along a first side of the signal conductor and in at least one second row that extends along a second, opposite side of the signal conductor and the contact plugs extending from the surface of the semiconductor structure into the semiconductor substrate and having top regions located at the surface of the semiconductor structure and bottom regions that terminate at an inner region of the semiconductor substrate, the contact plugs being in electrical contact with the semiconductor substrate at least in said bottom regions, wherein the bottom regions of the contact plugs comprise electrical contact enhancing means that comprise at least one of an additional diffusion and doping layer, thereby forming an electrical interconnection between the inner region of the substrate and the surface, for shielding the signal conductor from electrical fields and electrical currents in the substrate.
A semiconductor component arranged at a surface of a substrate, the semiconductor component comprising an active part and a multitude of contact plugs of a material having a good electrical conductivity, the contact plugs arranged in at least one row positioned at a perimeter of the active part and the contact plugs extending from the surface of the semiconductor component to the substrate, each contact plug having a top end and a bottom end including a bottom surface, the top end located at the surface of the semiconductor component and the bottom surface located in an inner region of the substrate that is between a top and bottom surface of the semiconductor substrate, the bottom end and bottom surface of each contact plug being in electrical contact with the substrate, and the bottom ends of the contact plugs being located separated from each other and in electrical contact with each other only through the substrate, the contact plugs thereby forming an electrical interconnection between the inner region of the substrate and the surface and shielding the active part of the semiconductor component from electrical fields and electrical currents in the substrate.
A shielded electrical signal conductor path in a semiconductor structure comprising a semiconductor substrate, the shielded electrical signal conductor path comprising a signal conductor and shielding means, the shielding means comprising a multitude of contact plugs of a material having a good electrical conductivity, the contact plugs arranged in at least one first row that extends along a first side of the signal conductor and in at least one second row that extends along a second, opposite side of the signal conductor and the contact plugs extending from the surface of the semiconductor structure to the semiconductor substrate, each contact plug having a top end located at the surface of the semiconductor structure and a bottom end including a bottom surface, the bottom surface located in an inner region of the semiconductor substrate that is between a top and bottom surface of the semiconductor substrate, the bottom end and bottom surface of each contact plug in electrical contact with the semiconductor substrate and the bottom ends of the contact plugs being located separated from each other, the bottom ends being in electrical contact with each other only through the substrate, the contact plugs thereby forming an electrical interconnection between the inner region of the substrate and the surface, for shielding the signal conductor from electrical fields and electrical currents in the substrate.
Dependencies are inferred from the claim text.