Semiconductor device with reduced transistor leakage current
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToru Nakura, Kimio Ueda
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Abstract
A semiconductor device improved to suppress a leakage current of a transistor is provided. A gate electrode is disposed on a semiconductor substrate. A pair of p type source/drain layers are provided on the surface of the semiconductor substrate, on both sides of the gate electrode in the gate length direction Y. An n type gate width determining layer is provided on the surface of the semiconductor substrate to sandwich the source/drain layers in the width direction X of the gate electrode, which determines a gate width of the gate electrode. The source/drain layers and the gate width determining layer are isolated by PN junction.
Claims11
A semiconductor device comprising:
- a substrate:
- a pair of source/drain layers of a first semiconductor conductivity type formed on a surface of said substrate;
- a gate width determining layer of a second semiconductor conductivity type formed on the surface of said substrate and being isolated by PN junction from said pair of source/drain layers, said gate width determining layer including a first portion sandwiched between said pair of said source/drain layers in a first direction, and second and third portions sandwiching said pair of source/drain layers and said first portion in a second direction vertical to said first direction;
- a first oxide film formed on the first portion of said gate width determining layer;
- and
- a gate electrode formed on said first oxide film.
Dependencies are inferred from the claim text.