Molecular memory & logic
AssigneeInternational Business Machines Corporation
InventorsDonald Stimson Bethune, Sandip Tiwari
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Abstract
The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.
Claims8
A microelectronic device comprising a field effect transistor comprising a substrate having a source and a drain region separated by a channel region, a layer of insulating material overlying said channel region, and a gate overlying said layer of insulating material, said insulating material containing at least one cage molecule having a closed hollow shell, said cage molecule being substantially comprised of carbon atoms or silicon atoms having the ability to conduct electrons, exhibit Coulomb barrier, and to receive and store at least one electron from the the source, drain or channel regions upon application of sufficient voltage between said source region and said drain region and the gate to overcome said Coulomb barrier.
Dependencies are inferred from the claim text.