Microprocessor structure having a compound semiconductor layer

A semiconductor structure comprising:

• a monocrystalline silicon substrate;
• an amorphous oxide material overlying the monocrystalline silicon substrate;
• a monocrystalline perovskite oxide material overlying the amorphous oxide material;
• and
• a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material includes a microprocessor comprising:
• a memory;
• at least one function unit;
• at least one register;
• and an interface coupling the memory, the at least one function unit, and the at least one register.

A semiconductor structure comprising:

• a monocrystalline silicon substrate;
• an amorphous oxide material overlying the monocrystalline silicon substrate;
• a monocrystalline perovskite oxide material overlying the amorphous oxide material;
• and
• a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material includes a microprocessor comprising:
• a memory unit for storing instructions and data;
• a plurality of multi-cycle instruction units for receiving and decoding instructions;
• an interface for transferring instructions and data throughout the microprocessor;
• at least one register file for receiving operands from the plurality of instruction units and providing operands to execution units;
• and
• a plurality of execution units for performing executable functions on the data and writing executing results into said at least one register file.

A semiconductor device comprising:

• a monocrystalline silicon substrate including a first portion of processing circuitry;
• an amorphous oxide material overlying the monocrystalline silicon substrate;
• a monocrystalline perovskite oxide material overlying the amorphous oxide material;
• and
• a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material includes a second portion of processing circuitry interfaced with the first portion of processing circuitry.

A process for fabricating a semiconductor structure comprising:

• providing a monocrystalline silicon substrate;
• depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
• forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
• and
• epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film;
• forming a microprocessor in the monocrystalline compound layer including:
• a memory;
• a sequencer;
• a plurality of function units;
• a plurality of registers;
• a plurality of caches;
• branch prediction circuitry;
• and
• an interface coupling the memory, the sequencer, the plurality of function units, the plurality of registers, and the branch prediction circuitry through optical and electrical interconnects.

A semiconductor structure comprising:

• a monocrystalline silicon substrate;
• an amorphous oxide material overlying the monocrystalline silicon substrate;
• a monocrystalline perovskite oxide material overlying the amorphous oxide material;
• and
• a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, wherein the monocrystalline compound semiconductor material includes a microprocessor including a plurality of single-ported registers.