Distributed feedback semiconductor laser device
AssigneeFurukawa Electric Co., Ltd.
InventorsToshikazu Mukaihara, Hitoshi Shimizu, Masaki Funabashi, Akihiko Kasukawa
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Abstract
A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.
Claims7
A distributed feedback (DFB) semiconductor laser device comprising:
- a semiconductor substrate;
- and
- an active layer and a diffraction grating overlying the semiconductor substrate,
- the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer.
A DFB semiconductor laser device comprising:
- a GaAs substrate;
- a quantum well structure including a GaInNAs(Sb) quantum well layer acting as an active layer;
- and
- an absorption layer including a diffraction grating made of GaInNAs(Sb) having a band-gap energy which is lower than that of the GaInNAs(Sb) quantum well layer.
A DFB semiconductor laser device comprising:
- a GaAs substrate;
- a quantum well structure including a GaInNAs(Sb) quantum well layer acting as an active layer;
- and
- an absorption layer including a diffraction grating made of GaInNAs(Sb) having a band-gap energy which is larger than that of the GaInNAs(Sb) quantum well layer by 40 meV or less.
Dependencies are inferred from the claim text.