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US 6,472,687 B1Granted
Light emitting diode with high luminance and method therefor
OwnerYu-Shan Wu, Jian-Shihn Tsang +2inventors
InventorsYu-Shan Wu, Jian-Shihn Tsang, Shih-Hsiung Chan, Jan-Dar Guo
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Abstract
The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.
Claims15
A light emitting diode, comprising:
- a substrate doped with a first conductivity type dopant;
- a first confining layer, formed on the substrate and doped with the first conductivity type dopant;
- an active layer, formed on the first confining layer;
- a second confining layer, formed on that active layer and doped with a second conductive type dopant;
- a selective highly-doped low resistive layer, formed on a portion of the second confining layer and doped with the second conductivity type dopant;
- a low light-absorbing current spreading layer, formed on the selective highly-doped low resistive layer and a portion of the second confining layer and doped with the second conductive type dopant, wherein the low light-absorbing current spreading layer is a multi-layered structure composed of non-light-absorbing materials and light-absorbing materials alternatively superposed;
- a metal electrode, formed on the bottom of the substrate;
- and
- a second metal electrode, formed on the low light-absorbing current spreading layer, thereby when voltage is applied to the second metal electrode, the current flows from the second electrode toward the selective highly-doped low resistive layer on the lateral sides to effectively spread out so as not to produce current jamming.
6 more elements
A light emitting diode, comprising:
- a substrate doped with a first conductivity type dopant;
- a first confining layer, formed on the substrate and doped with the first conductivity type dopant;
- an active layer, formed on the first confining layer;
- selective highly-doped low resistant layer, formed on a portion of the active layer and doped with the second conductivity type dopant;
- a second confining layer, formed on the selective highly-doped low resistive layer and a portion of the active layer and doped with a second conductive type dopant;
- a low light-absorbing current spreading layer, formed on the second confining layer and doped with the second conductive type dopant;
- a metal electrode, formed on the bottom of the substrate;
- a second metal electrode, formed on the low light-absorbing current spreading layer, thereby when voltage is applied to the second metal electrode, the current flows from the second electrode toward the lateral sides to effectively spread out so as not to produce current jamming.
5 more elements
Dependencies are inferred from the claim text.