Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation

A semiconductor structure comprising:

• a first cladding layer of InGaNAs material having a first conduction type,
• an InGaNAs active layer, and
• a second cladding layer of InGaNAs material having a conduction type opposite the first conduction type, the crystal growth temperature and the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A light emitting device comprising:

• a first conduction type of an InGaNAs first cladding layer without phase separation, an InGaNAs active layer without phase separation, and a second conduction type of InGaNAs second cladding layer without phase separation, said InGaNAs second cladding layer having a ridge structure, all successively formed one upon each other.

A semiconductor structure comprising:

• a certain conduction type of a In1−x1Gax1N1−y1Asy1 first cladding, an In1−x2Gax2N1−y2Asy2 active layer, an opposite conduction type of a In1−x3Gax3N1−y3Asy3 second cladding layer, all successively formed one upon each other, wherein x1, x2, and x3 define the Ga content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, x1/0.2+y1/0.9<=1 or 1.25x1−8.33y1>=1, x2/0.2+y2/0.9<=1 or 1.25x2 8.33y2>=1, x3/0.2+y3/0.9<=1 or 1.25x3−8.33y3>=1, EgInN(1−x1)(1−y1)+EgInAs(1−x1)y1+EgGaNx1(1−y1)+EgGaAsx1y1>EgInN(1−x2)(1−y2)+EgInAs(1−x2)y2+EgGaNx2(1−y2)+EgGaAsx2y2, and EgInN(1−x3)(1−y3)+EgInAs(1−x3)y3+EgGaNx3(1−y3)+EgGaAsx3y3>EgInN(1−x2)(1−y2)+EgInAs(1−x2)y2+EgGaNx2(1−y2)+EgGaAsx2y2, where EgGaN, EgGaAs, EgInN, and EgInAs are the band gap energy of GaN, GaAs, InN, and InAs, respectively.

A light emitting device comprising:

• a certain conduction type of a In1−x1Gax1N1−y1Asy1 first cladding layer, a In1−x2Gax2N1−y2Asy2 active layer, an opposite conduction type of a In1−x3Gax3N1−y3Asy3 second cladding layer, said In1−x3Gax3N1−y3Asy3 second cladding layer has a ridge structure, all successively formed one upon each other, wherein x1, x2, and x3 define the Ga content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1 <=1, 0<y2<1, 0<=y3<=1, x1/0.2+y1/0.9<=1 or 1.25x1−8.33y1>=1, x2/0.2+y2/0.9<=1 or 1.25x2 8.33y2>=1, x3/0.2+y3/0.9<=1 or 1.25x3−8.33y3>=1, EgInN(1−x1)(1−y1)+EgInAs(1−x1)y1+EgGaNx1(1−y1)+EgGaAsx1y1>EgInN(1−x2)(1−y2)+EgInAs(1−x2)y2+EgGaNx2(1−y2)+EgGaAsx2y2, and EgInN(1−x3)(1−y3)+EgInAs(1−x3)y3+EgGaNx3(1−y3)+EgGaAsx3y3>EgInN(1−x2)(1−y2)+EgInAs(1−x2)y2+EgGaNx2(1−y2)+EgGaAsx2y2, where EgGaN, EgGaAs, EgInN, and EgInAs are the band gap energy of GaN, GaAs, InN, and InAs, respectively.

A semiconductor structure comprising:

• a first cladding layer of AlInNAs material having a first conduction type,
• an AlInNAs active layer, and
• a second cladding layer of AlInNAs material having a conduction type opposite the first conduction type, the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A semiconductor structure comprising:

• a first cladding layer of AlInNAs material having a first conduction type,
• an AlInNAs active layer, and
• a second cladding layer of AlInNAs material having a conduction type opposite the first conduction type, the crystal growth temperature and the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A light emitting device comprising:

• a first conduction type of an AlInNAs first cladding layer without phase separation, an AlInNAs active layer without phase separation, and a second conduction type of AlInNAs second cladding layer without phase separation, said AlInNAs second cladding layer having a ridge structure, all successively formed one upon each other.

A semiconductor structure comprising:

• a certain conduction type of a Al1−x1Inx1N1−y1Asy1 first cladding, a Al1−x2Inx2N1−y2Asy2 active layer, an opposite conduction type of a Al1−x3Inx3N1−y3Asy3 second cladding layer, all successively formed one upon each other, wherein x1, x2, and x3 define the In content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, x1/0.1+y1/0.02 <=1 or x1/0.9-2.22y1>=1, x2/0.1+y2/0.02<=1 or x2/0.9 2.22y2>=1, x3/0.1+y3/0.02<=1 or x3/0.9-2.22y3>=1, EgAlN(1−x1)(1−y1)+EgAlAs(1−x1)y1+EgInNx1(1−y1)+EgInAsx1y1>EgAlN(1−x2)(1−y2)+EgAlAs(1−x2)y2+EgInNx2(1−y2)+EgInAsx2y2, and EgAlN(1−x3)(1−y3)+EgAlAs(1−x3)y3+EgInNx3(1−y3)+EgInAsx3y3>EgAlN(1−x2)(1−y2)+EgAlAs(1−x2)y2+EgInNx2(1−y2)+EgInAsx2y2, where EgAlN, EgAlAs, EgInN, and EgInAs are the band gap energy of AlN, AlAs, InN, and InAs, respectively.

A light emitting device comprising:

• a certain conduction type of an Al1−x1Inx1N1−y1Asy1 first cladding layer, an Al1−x2Inx2N1−y2Asy2 active layer, an opposite conduction type of an Al1−x3Inx3N1−y3Asy3 second cladding layer, said Al1−x3Inx3N1−y3Asy3 second cladding layer has a ridge structure, all successively formed one upon each other, wherein x1, x2, and x3 define the In content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, x1/0.1+y1/0.02<=1 or x1/0.9−2.22y1>=1, x2/0.1+y2/0.02<=1 or x2/0.9−2.22y2>=1, x3/0.1+y3/0.02<=1 or x3/0.9-2.22y3>=1, EgAlN(1−x1)(1−y1)+EgAlAs(1−x1)y1+EgInNx1(1−y1)+EgInAsx1y1>EgAlN(1−x2)(1−y2)+EgAlAs(1−x2)y2+EgInNx2(1−y2)+EgInAsx2y2, and EgAlN(1−x3)(1−y3)+EgAlAs(1−x3)y3+EgInNx3(1−y3)+EgInAsx3y3>EgAlN(1−x2)(1−y2)+EgAlAs(1−x2)y2+EgInNx2(1−y2)+EgInAsx2y2, where EgAlN, EgAlAs, EgInN, and EgInAs are the band gap energy of AlN, AlAs, InN, and InAs, respectively.