Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication

A semiconductor structure comprising:

• a first cladding layer of GaAlNP material having a first conduction type,
• an GaAlNP active layer, and
• a second cladding layer of GaAlNP material having a conduction type opposite the first conduction type, the crystal growth temperature and the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A light emitting device comprising:

• a first conduction type of an GaAlNAs first cladding layer without phase separation,
• an GaAlNAs active layer without phase separation, and
• a second conduction type of GaAlNAs second cladding layer without phase separation, said GaAlNAs second cladding layer having a ridge structure, all successively formed one upon each other, wherein the Al content, x, and the As content, y, of all the constituent layers satisfy the condition that 3.18(1−x)(1−y)+3.86(1−x)y+3.11x(1−y)+3.85xy nearly equals a constant value.

A light emitting device comprising:

• a first conduction type of an GaAlNAs first cladding layer without phase separation,
• an GaAlNAs active layer without phase separation, and
• a second conduction type of GaAlNAs second cladding layer without phase separation, said GaAlNAs second cladding layer having a ridge structure, all successively formed one upon each other, wherein the Al content, x, and the As content, y, of all the constituent layers satisfy the condition that 3.18(1−x)(1−y)+3.86(1−x)y+3.11x(1−y)+3.85xy nearly equals 3.18.

A semiconductor structure comprising:

• a certain conduction type of a Ga1−x1Alx1N1−y1Py1 first cladding, a Ga1−x2Alx2N1−y2Py2 active layer, an opposite conduction type of a Ga1−x3Alx3N1−y3Py3 second cladding layer, all successively formed one upon each other, wherein x1, x2, and x3 define the Al content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<x1<1, 0<x2<1, 0<x3<1, 0<y1<1, 0<y2<1, 0<y3<1, −0.225x1+25y1<=1, −0.225x2+25y2<=1, −0.225x3+25y3<=1, EgGaN(1−x1)(1−y1)+EgGaP(1−x1)y1+EgAlNx1 (1−y1)+EgAlPx1y1>EgGaN(1−x2)(1−y2)+EgGaP(1−x2)y2+EgAlNx2(1−y2)+EgAlPx2y2, and EgGaN(1−x3)(1−y3)+EgGaP(1−x3)y3+EgAlNx3(1−y3)+EgAlPx3y3>EgGaN(1−x2)(1−y2)+EgGaP(1−x2)y2+EgAlNx2(1−y2)+EgAlPx2y2, where EgGaN, EgGaP, EgAlN, and EgAlP are the band gap energy of GaN, GaP, AlN, and AlP, respectively.

A light emitting device comprising:

• a certain conduction type of a Ga1−x1Alx1N1−y1Py1 first cladding layer, a Ga1−x2Alx2N1−y2Py2 active layer, an opposite conduction type of a Ga1−x3Alx3N1−y3Py3 second cladding layer, said Ga1−x3Alx3N1−y3Py3 second cladding layer has a ridge structure, all successively formed one upon each other, wherein x1, x2, and x3 define the Al content, y1, y2, and y3 define the P content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<x1<1, 0<x2<1, 0<x3<1, 0<y1<1, 0<y2<1, 0<y3<1, −0.225x1+25y1<=1, −0.225x2+25y2<=1, −0.225x3+25y3<=1, EgGaN(1−x1)(1−y1)+EgGaP(1−x1)y1+EgAlNx1 (1−y1)+EgAlPx1y1>EgGaN(1−x2)(1−y2)+EgGaP(1−x2)y2+EgAlNx2(1−y2)+EgAlPx2y2, and EgGaN(1−x3)(1−y3)+EgGaP(1−x3)y3+EgAlNx3(1−y3)+EgAlPx3y3>EgGaN(1−x2)(1−y2)+EgGaP(1−x2)y2+EgAlNx2(1+y2)+EgAlPx2y2, where EgGaN, EgGaP, EgAlN, and EgAlP are the band gap energy of GaN, GaP, AlN, and AlP, respectively.

A semiconductor structure comprising:

• a first cladding layer of InGaNP material having a first conduction type,
• an InGaNP active layer, and
• a second cladding layer of InGaNP material having a conduction type opposite the first conduction type, the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A semiconductor structure comprising:

• a first cladding layer of InGaNP material having a first conduction type,
• an InGaNP active layer, and
• a second cladding layer of InGaNP material having a conduction type opposite the first conduction type, the crystal growth temperature and the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A light emitting device comprising:

• a first conduction type of an InGaNP first cladding layer without phase separation, an InGaNP active layer without phase separation, and a second conduction type of InGaNP second cladding layer without phase separation, said InGaNP second cladding layer having a ridge structure, all successively formed one upon each other.

A semiconductor structure comprising:

• a certain conduction type of a In1−x1Gax1N1−y1Py1 first cladding, an In1−x2Gax2N1−y2Py2 active layer, an opposite conduction type of a In1−x3Gax3N1−y3Py3 second cladding layer, all successively formed one upon each other, wherein x1, x2, and x3 define the Ga content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, 4.93x1+12.8y1<=1 or 1.28x1−7y1>=1, 4.93x2+12.8y2<=1 or 1.28x2 7y2>=1, 4.93x3+12.8y3<=1 or 1.28x3−7y3>=1, EgInN(1−x1)(1−y1)+EgInP(1−x1)y1+EgGaNx1(1−y1)+EgGaPx1y1>EgInN (1−x2)(1−y2)+EgInP(1−x2)y2+EgGaNx2(1−y2)+EgGaPx2y2, and EgInN(1−x3)(1−y3)+EgInP(1−x3)y3+EgGaNx3(1−y3)+EgGaPx3y3>EgInN (1−x2)(1−y2)+EgInP(1−x2)y2+EgGaNx2(1−y2)+EgGaPx2y2, where EgGaN, EgGaP, EgInN, and EgInP are the band gap energy of GaN, GaP, InN, and InP, respectively.

A light emitting device comprising:

• a certain conduction type of a In1−x1Gax1N1−y1Py1 first cladding layer, a In1−x2Gax2N1−y2Py2 active layer, an opposite conduction type of a In1−x3Gax3N1−y3Py3 second cladding layer, said In1−x3Gax3N1−y3Py3 second cladding layer has a ridge structure, all successively formed one upon each other, wherein x1, x2, and x3 define the Ga content, y1, y2, and y3 define the P content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, 4.93x1+12.8y1<=1 or 1.28x1−7y1>=1, 4.93x2+12.8y2<=1 or 1.28x2−7y2>=1, 4.93x3+12.8y3<=1 or 1.28x3−7y3>=1, EgInN(1−x1) (1−y1)+EgInP(1−x1)y1+EgGaNx1(1−y1)+EgGaPx1y1>EgInN(1−x2) (1−y2)+EgInP(1−x2)y2+EgGaNx2(1−y2)+EgGaPx2y2, and EgInN(1−x3)(1−y3)+EgInP(1−x3) y3+EgGaNx3(1−y3)+EgGaPx3y3>EgInN(1−x2) (1−y2)+EgInP(1−x2)y2+EgGaNx2(1−y2)+EgGaPx2y2, where EgGaN, EgGaP, EgInN, and EgInP are the band gap energy of GaN, GaP, InN, and InP, respectively.

A semiconductor structure comprising:

• a first cladding layer of AlInNP material having a first conduction type,
• an AlInNP active layer, and
• a second cladding layer of AlInNP material having a conduction type opposite the first conduction type, the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A semiconductor structure comprising:

• a first cladding layer of AlInNP material having a first conduction type,
• an AlInNP active layer, and
• a second cladding layer of AlInNP material having a conduction type opposite the first conduction type, the crystal growth temperature and the mole fractions of the constituent elements of each layer being selected to minimize phase separation.

A light emitting device comprising:

• a first conduction type of an AlInNP first cladding layer without phase separation, an AlInNP active layer without phase separation, and a second conduction type of AlInNP second cladding layer without phase separation, said AlInNP second cladding layer having a ridge structure, all successively formed none upon each other.

A semiconductor structure comprising:

• a certain conduction type of a Al1−x1Inx1N1−y1Py1 first cladding, a Al1−x2Inx2N1−x2Py2 active layer, an opposite conduction type of a Al1−x3Inx3N1−y3Py3 second cladding layer, all successively formed one upon each other, wherein x1, x2, and x3 define the In content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, 9.62x1+32.3y1<=1 or 1.12x1−1.54y1>=1, 9.62x2+32.3y2<=1 or 1.12x2−1.54y2>=1, 9.62x3+32.3y3<=1 or 1.12x3−1.54y3>=1, EgAlN(1−x1)(1−y1)+EgAlP(1−x1)y1+EgInNx1(1−y1)+EgInPx1y1>EgAlN(1−x2) (1−y2)+EgAlP(1−x2)y2+EgInNx2(1−y2)+EgInPx2y2, and EgAlN(1−x3)(1−y3)+EgAlP(1−x3)y3+EgInNx3(1−y3)+EgInPx3y3>EgAlN(1−x2) (1−y2)+EgAlP(1−x2)y2+EgInNx2(1−y2)+EgInPx2y2, where EgAlN, EgAlP, EgInN, and EgInP are the band gap energy of AlN, AlP, InN, and InP, respectively.

A light emitting device comprising:

• a certain conduction type of an Al1−x1Inx1N1−y1Py1 first cladding layer, an Al1−x2Inx2N1−y2Py2 active layer, an opposite conduction type of an Al1−x3Inx3N1−y3Py3 second cladding layer, said Al1−x3Inx3N1−y3Py3 second cladding layer has a ridge structure, all successively formed one upon each other, wherein x1, x2, and x3 define the In content, y1, y2, and y3 define the As content, and x1, y1, x2, y2, x3, and y3 have a relationship of 0<=x1<=1, 0<x2<1, 0<=x3<=1, 0<=y1<=1, 0<y2<1, 0<=y3<=1, 9.62x1+32.3y1<=1 or 1.12x1−1.54y1>=1, 9.62x2+32.3y2<=1 or 1.12x2−1.54y2>=1, 9.62x3+32.3y3<=1 or 1.12x3−1.54y3>=1, EgAlN(1−x1)(1−y1)+EgAlP(1−x1)y1+EgInNx1(1−y1)+EgInPx1y1>EgAlN(1−x2) (1−y2)+EgAlP(1−x2)y2+EgInNx2(1−y2)+EgInPx2y2, and EgAlN(1−x3)(1−y3)+EgAlP(1−x3)y3+EgInNx3 (1−y3)+EgInPx3y3>EgAlN(1−x2)(1−y2)+EgAlP(1−x2)y2+EgInNx2(1−y2)+EgInPx2y2, where EgAlN, EgAlP, EgInN, and EgInP are the band gap energy of AlN, AlP, InN, and InP, respectively.