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US 6,472,339 B2Granted
Barium titanate semiconductive ceramic
AssigneeMurata Manufacturing Co., Ltd.
InventorsMitsutoshi Kawamoto, Hideaki Niimi, Ryouichi Urahara, Yukio Sakabe
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AssigneeMurata Manufacturing Co., Ltd.
InventorsMitsutoshi Kawamoto, Hideaki Niimi, Ryouichi Urahara, Yukio Sakabe
Estimating the term…
The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 μm or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.
A barium titanate which is a fired semiconductive ceramic exhibiting a positive resistance-temperature characteristic and having an average ceramic grain size of 0.9 μm or less, a specific resistance at room temperature not exceeding 90 ohm.cm and a withstand voltage of at least 720 V/mm.
Dependencies are inferred from the claim text.