Precursors for zirconium and hafnium oxide thin film deposition
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, David R. Evans
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Abstract
A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.
Claims4
A method of making a precursor for a thin film formed by chemical vapor deposition processes, comprising:
- mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium;
- refluxing the solution for twelve hours in an argon atmosphere;
- removing the solvents via vacuum, thereby producing a solid compound;
- and
- sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg.
A method of forming a ZOx thin film, where Z is an element taken from the group of elements consisting of hafnium and zirconium, on a semiconductor device, comprising:
- preparing a suitable substrate, including building semiconductor structures thereon;
- depositing a layer of ZOx, on the semiconductor structure by a process taken from the group of processes consisting of chemical vapor deposition and atomic layer chemical vapor deposition, using a ZOx precursor taken from the group of ZOx precursors consisting of ZCl(tmhd)3 and ZCl2(tmhd)2;
- and
- completing the semiconductor device.
Dependencies are inferred from the claim text.