Forming an encapsulating layer after deposition of a dielectric comprised of corrosive material

A method for forming insulating material surrounding at least one aluminum interconnect structure of an integrated circuit, the method including the steps of:

• A. placing a first semiconductor wafer in a reaction chamber for forming said insulating material surrounding said at least one aluminum interconnect structure of said integrated circuit using a plasma enhanced deposition process on said first semiconductor wafer;
• B. forming a liner layer of unfluorinated silicon dioxide, wherein said liner layer of unfluorinated silicon dioxide is not corrosive to said at least one aluminum interconnect structure on said first semiconductor wafer, and wherein said liner layer is deposited substantially conformal on any exposed surfaces of said at least one aluminum interconnect structure;
• C. depositing fluorinated silicon dioxide having low dielectric constant to surround said liner layer on said at least one aluminum interconnect structure using a first plasma enhanced deposition process within said reaction chamber, said fluorinated silicon dioxide filling any gaps between said at least one aluminum interconnect structure;
• wherein said fluorinated silicon dioxide is comprised of fluorine that degrades aluminum, and wherein said liner layer prevents contact of said fluorine to said at least one aluminum interconnect structure;
• and wherein said step C is performed within said reaction chamber, and wherein said fluorine is deposited on said reaction chamber during said step C;
• and
• D. forming an encapsulating layer of unfluorinated silicon dioxide over said fluorinated silicon dioxide on said first semiconductor wafer and on said reaction chamber using a second plasma enhanced deposition process within said reaction chamber to prevent contact of fluorine to any exposed structure of a second semiconductor wafer to be subsequently placed into said reaction chamber after said step D when said exposed structure is reactive with said fluorinated silicon dioxide.