Film forming method, semiconductor device manufacturing method, and semiconductor device
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorsHiroshi Ikakura, Tomomi Suzuki, Kazuo Maeda, Yoshimi Shioya, Kouichi Ohira
Life of this patent
Estimating the term…
Abstract
There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.
Claims15
A method for forming a silicon-containing insulating film on a substrate, said method comprising:
- forming a plasma of a reaction gas that contains H2, an oxidizing gas, and a compound having a siloxane bond and a Si—R bond, wherein R is an alkyl group;
- and
- contacting the substrate with said plasma, with components of said plasma reacting to form the silicon-containing insulating film on the substrate.
A method for forming a silicon-containing insulating film on a substrate, said method comprising:
- forming a plasma of a reaction gas that contains H2, an oxidizing gas, and a compound having a siloxane bond and a Si—OR bond wherein OR is an alkoxyl group ;
- and
- contacting the substrate with said plasma, with components of said plasma reacting to form the silicon-containing insulating film on the substrate.
A method for forming a silicon-containing insulating film on a substrate, said method comprising:
- forming a plasma of a reaction gas that contains H2, an oxidizing gas, and a silicon compound containing an alkyl group;
- and
- contacting the substrate with said plasma, with components of said plasma reacting to form the silicon-containing insulating film on the substrate.
Dependencies are inferred from the claim text.