Method for forming an interlayer insulating film, and semiconductor device
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorsToshio Kato, Noboru Tokumasu, Makoto Kurotobi, Taizo Oku
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Abstract
A method for forming an interlayer insulating film includes the steps of: forming a metal film on a substrate; forming a first insulating film on the metal film; patterning the first insulating film by selectively etching the first insulating film; patterning the metal film by etching the metal film using the patterned first insulating film as a mask; forming an overhang portion of the first insulating film on the metal film by selectively etching a side portion of the metal film; and forming a second insulating film on the entire structure.
Claims9
A method for forming an interlayer insulating film, comprising the steps of:
- forming a metal film on a substrate;
- forming a first insulating film on the metal film;
- patterning the first insulating film by selectively etching the first insulating film;
- patterning the metal film to form spaced wirings by etching the metal film using the patterned first insulating film as a mask;
- forming overhang portions of the first insulating film overhanging the metal film by selectively etching side walls of the metal film;
- and
- forming a second insulating film coating said side walls and partially filling spaces between facing side walls of adjacent wirings, with a cavity in the second insulating film approximately centered between and spaced from said facing side walls.
A method for forming an interlayer insulating film according to claimed 6, wherein said SiN film is formed by a plasma enhanced Chemical Vapor Deposition method using a gas containing SiH4 and NH3 as a source gas, or a plasma enhanced Chemical Vapor Deposition method using a gas containing SiH4 and N2 as a source gas.
Dependencies are inferred from the claim text.