Method of depositing tungsten nitride using a source gas comprising silicon

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• introducing a gas comprising nitrogen into the chamber;
• introducing a gas comprising tungsten into the chamber;
• introducing a gas comprising silicon into the chamber;
• and
• depositing a tungsten nitride layer to overly the substrate under chamber conditions sufficient to deposit tungsten nitride comprising silicon.

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• introducing a source gas mixture into the chamber, wherein the source gas mixture includes:
• ammonia;
• a gas selected from the group consisting of:
• tungsten hexaflouride and tungsten carbonyl;
• and
• a gas selected from the group consisting of:
• silane, organic silane, and a compound that is a multiple order of silane;
• and
• depositing a tungsten nitride layer to overly the substrate under chamber conditions sufficient to deposit tungsten nitride comprising silicon.

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• providing conditions in the chamber sufficient to deposit tungsten nitride, including introducing nitrogen, tungsten and silicon into the chamber;
• and
• depositing a layer of tungsten nitride to overly the substrate.

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• providing conditions in the chamber sufficient to deposit tungsten nitride, including introducing a source gas mixture into the chamber, the source gas mixture including a nitrogen-containing gas, a tungsten-containing gas, and a silicon-containing gas;
• and
• depositing a layer of tungsten nitride to overly the substrate.

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• providing conditions in the chamber sufficient to deposit tungsten nitride, including introducing a source gas mixture into the chamber that includes nitrogen, tungsten and silicon;
• and
• depositing a layer of tungsten nitride to overly the substrate.

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• providing conditions in the chamber sufficient to deposit tungsten nitride, including introducing ammonia, tungsten hexaflouride and silane into the chamber;
• and
• depositing a layer of tungsten nitride to overly the substrate.

A method of forming a tungsten nitride layer overlying a substrate, comprising:

• providing the substrate in a chamber;
• providing conditions in the chamber sufficient to deposit tungsten nitride, wherein providing conditions in the chamber includes introducing nitrogen, tungsten and silicon into the chamber;
• and
• depositing a layer of tungsten nitride comprising silicon to overly the substrate.

A method of fabricating a non-planar capacitor electrode, comprising:

• forming a layer of dielectric material;
• providing nitrogen and tungsten for use in a chemical vapor deposition process;
• and
• depositing a layer of only tungsten nitride to form an electrode of the non-planar electrode.

A method of fabricating a contact plug in an integrated circuit, comprising:

• fabricating a via in the integrated circuit to expose a conductive layer;
• providing nitrogen, tungsten and silicon for use in a chemical vapor deposition process;
• depositing a layer of tungsten nitride by performing a chemical vapor deposition process, wherein the layer of tungsten nitride includes silicon;
• and
• performing a chemical mechanical polish operation on the tungsten nitride layer.

A method of fabricating a gate electrode, comprising:

• providing the substrate in a chamber;
• providing conditions in the chamber sufficient to deposit tungsten nitride, including introducing nitrogen, tungsten and silicon into the chamber;
• depositing a layer of tungsten nitride to overly the substrate, wherein the layer of tungsten nitride includes silicon;
• patterning the layer of tungsten nitride to define the gate electrode;
• and
• removing a portion of the layer of tungsten nitride, wherein a remaining portion of the layer of tungsten nitride forms at least a portion of the gate electrode.