Method of forming a metal to polysilicon contact in oxygen environment
AssigneeMicron Technology, Inc.
InventorWerner Juengling
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Abstract
A method for forming a contact capable of tolerating an O2 environment up to several hundred degrees Celsius for several hours is disclosed. To slow down the metal oxide front of the metal layer at the metal-polysilicon interface, the metal layer is surrounded by one or more oxygen sink spacers and layers. These oxygen sink spacers and layers are oxidized before the metal layer at the bottom of the plug is oxidized. Accordingly, the conductive connection between the polysilicon and any device built on top of the barrier layer is preserved.
Claims29
A method for fabricating a metal-polysilicon contact in a semiconductor device, comprising the steps of:
- forming an insulating layer over a barrier layer residing over a polysilicon layer;
- forming a contact opening in said insulating layer;
- and
- forming at least one conductive layer and at least one oxygen sink layer in said contact opening, said oxygen sink layer being capable of absorbing oxygen.
A method for fabricating a metal-polysilicon contact in a semiconductor device, comprising the steps of:
- forming an insulating layer over a barrier layer residing over a polysilicon layer;
- forming a contact opening in said insulating layer;
- and
- forming at least one conductive layer and at least one oxygen sink layer in said contact opening, said oxygen sink layer being capable of absorbing oxygen, wherein said at least one oxygen sink layer is formed as a plurality of spaced oxygen sink layers.
A method for fabricating a metal-polysilicon contact in a semiconductor device, comprising the steps of:
- forming an insulating layer over a barrier layer residing over a polysilicon layer;
- forming a contact opening in said insulating layer;
- and
- forming at least one conductive layer and at least one oxygen sink layer in said contact opening, said oxygen sink layer being capable of absorbing oxygen, wherein said at least one oxygen sink layer comprises two oxygen sink layers separated by one conductive layer.
A method for fabricating a metal-polysilicon contact in a semiconductor device, comprising the steps of:
- forming an insulating layer over a barrier layer residing over a polysilicon layer;
- forming a contact opening in said insulating layer;
- and
- forming at least one conductive layer and at least one oxygen sink layer in said contact opening, said oxygen sink layer being capable of absorbing oxygen, wherein said at least one oxygen sink layer comprises three oxygen sink layers separated by two contacting conductive layers.
Dependencies are inferred from the claim text.