Chemical vapor deposition process

A chemical vapor deposition process, wherein a semiconductor wafer is positioned in a reaction chamber, said semiconductor wafer including an insulating layer disposed over a semiconductor substrate and said insulating layer defining a contact opening therein, said contact opening defining insulating side wall regions therein, said insulating side walls extending from an upper surface region of said insulating layer to an exposed semiconductor region of said semiconductor substrate, said process comprising:

• introducing a set of reactants into said reaction chamber;
• generating a RF plasma in the vicinity of said semiconductor wafer and regulating temperature and pressure of said reaction chamber;
• and
• controlling said introduction of said reactants, said generation of said RF plasma, and said regulation of said temperature and pressure so as to form a primary film over said upper surface region of said insulating layer, over said insulating side wall regions, and over said exposed semiconductor region of said semiconductor substrate.

A chemical vapor deposition process, wherein a semiconductor wafer is positioned in a reaction chamber, said process comprising:

• introducing a set of reactants into said reaction chamber;
• generating a RF plasma in the vicinity of said semiconductor wafer and regulating temperature and pressure of said reaction chamber, wherein said RF plasma is generated at a power of about 1000 W and said temperature of said reaction chamber is regulated in the range of between about 500° C. and about 700° C.;
• and
• controlling said introduction of said reactants, said generation of said RF plasma, and said regulation of said temperature and pressure so as to form a primary film over said upper surface region of said insulating layer, over said insulating side wall regions, and over said exposed semiconductor region of said semiconductor substrate, wherein said primary film is formed over said upper surface region and said insulating side wall regions according to the following chemical reaction
• TiCl4+H2→Ti+A
• wherein said primary film is formed over said exposed silicon region according to the following chemical reaction
• TiC4+H2+Si→TiSi+A
• where Si represents silicon present in said silicon substrate and A represents a non-film forming component of said chemical reactions.

A chemical vapor deposition process, wherein a semiconductor wafer is positioned in a reaction chamber, said process comprises:

• introducing a set of reactants into said reaction chamber;
• generating a RF plasma in the vicinity of said semiconductor wafer and regulating temperature and pressure of said reaction chamber;
• controlling said introduction of said reactants, said generation of said RF plasma, and said regulation of said temperature and pressure so as to form a primary film over said upper surface region of said insulating layer, over said insulating side wall regions, and over said exposed silicon region of said silicon substrate;
• introducing a nitrogen-based gas into said reaction chamber;
• and
• generating a nitridizing RF plasma in the vicinity of said semiconductor wafer so as to nitridize said primary film formed over said upper surface region, said insulating side wall regions, and said exposed silicon region, wherein
• said nitridizing process causes conversion of said primary film formed over said upper surface region and said insulating side wall regions to a TiN layer, and
• said nitridizing process causes formation of a TiN passivation layer over said primary film formed over said exposed silicon region.