Back to results
US 6,472,320 B2Granted
Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Trung T. Doan
Life of this patent
Estimating the term…
Abstract
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
Claims17
A method for depositing a rough polysilicon film on a substrate, the method comprising the acts of:
- (a) disposing the substrate on a wafer chuck in a deposition chamber;
- (b) introducing reactant gas into the deposition chamber;
- (c) heating the wafer chuck;
- (d) applying a repetitively pulsed voltage to a plate spaced apart from the wafer chuck in the deposition chamber to create a pulsed field between the plate and the wafer chuck;
- and
- (e) ionizing the reactant gases using the pulsed field to deposit the rough polysilicon film on the substrate.
3 more elements
A method for depositing a rough polysilicon film on a three-dimensional feature on substrate, the method comprising the acts of:
- (a) introducing reactant gas into a deposition chamber containing a substrate having at least one three-dimensional feature thereon;
- and
- (b) repetitively enabling and disabling a plasma within the deposition chamber to deposit the rough polysilicon film over the at least one three-dimensional feature.
Dependencies are inferred from the claim text.